Abstract: A system and method for managing a respiratory condition of a user is disclosed. The system includes an oxygen concentrator having a compression system configured to generate oxygen enriched air for delivery to the user. A physiological sensor is configured to collect physiological data of the user. The physiological data is of one or more data types. An operational sensor is configured to collect operational data of the oxygen concentrator during operation of the oxygen concentrator. The operational data is of one or more data types. A processor is configured to receive the collected physiological data and the operational data and compute a summary parameter for values of each data type. The processor is also configured to compute a health score from the summary parameter values.

Abstract: A method and system of responding to adverse environmental conditions local to a user of an oxygen concentrator is disclosed. Physiological data of the user is collected. Operational data of the oxygen concentrator is collected during operation of the oxygen concentrator. Environment data local to the oxygen concentrator is collected. Based on the collected environmental data, it is determined whether adverse environmental conditions exist local to the oxygen concentrator. The collected physiological, operational, and environmental data are analyzed to determine a responsive action to the determined adverse environmental conditions. The responsive action is communicated to the user.

Abstract: A trench MOSFET structure formed in a semiconductor substrate and method of forming the same are disclosed. The trench MOSFET includes a capacitor having a capacitor dielectric layer formed of an oxide-un-doped poly-oxide in the trench bottom. Firstly, the trenches are formed in a p-well of the epi-layer of an n-type impurity doped substrate through a lithographic and an etch step. Next, a gate oxide layer and an intrinsic polysilicon layer are successively formed, and a HTO layer is deposited on the trench bottom to form the oxide-un-doped poly-oxide dielectric layer. Subsequently a doped polysilicon layer is filled into the trench as a trench gate. Then, processes of source contact regions and gate contacts are followed. Finally a drain contact is formed on a rear surface of the substrate.

Abstract: A process for fabricating a trench power semiconductor device is disclosed. A first dielectric layer between the pad oxide layer and the mask oxide layer is formed so as to form a gate with a height higher than the surface of the pad oxide layer after the first dielectric layer is removed. In addition, a sidewall structure is formed at laterals of the gate protruded from the surface of the trench structure. Hence the source structure and the first conductive layer formed at the surface of the gate can be isolated through the sidewall structure. When the trench power semiconductor device is processed at high frequency, the net resistance of the gate can be reduced by the first conductive layer, and thus the electrical properties thereof can be elevated.