Abstract: An electromegasonic wafer cleaning system is disclosed that is extremely important, if not essential, in the fabrication of advanced microelectronic devices having a line width or feature size of from 0.05 to 0.10 micron. A unique synergistic combination is provided wherein piezoelectric transducer means are operated at a tolerable power level, such as from 1 to 2 watts per square centimeter, to minimize the risk of harm to the extremely delicate microcircuits and wherein the face of each wafer is negatively charged to a temperate voltage, such as from 5 to 20 volts, sufficient to cause effective removal of colloidal or sub 0.4-micron contaminant particles. This unique wafer cleaning system supersedes and replaces the standard megasonic-assisted RCA-type wet wafer cleaning systems which have never been able to eliminate or provide efficient purging of harmful sub 0.1-micron particles.

Abstract: An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective field intensity which can substantially eliminate intolerable sub-0.05 micron “killer” defects when making highly advanced microchips with a feature size or line width less than 0.15 micron. The process can be used with frequent voltage reversal for automated wet-batch cleaning operations using cassettes that hold 10 to 50 wafers at a time and in various other operations involving megasonic transducers, mechanical brush scrubbers, laser cleaners and CMP equipment. The electropurge process is primarily intended for Fab plants where large wafers with a diameter of 200 to 400 mm require 250 to 350 steps including many dry layering, patterning and doping operations and at least 30 wet processing steps.

Abstract: Cup-shaped porous silica preforms suitable for manufacture of large 24-inch crucibles used in Czochralski crystal-growing furnaces are produced by a unique electrophoretic casting process using a high-purity aqueous silica slip or slurry having a predetermined particle-size distribution, an average particle size of from 6 to 10 microns and a solids content of from 80 to 85 percent by weight. The slurry contains an electrolyte, such as ammonium hydroxide, has a pH of from 7.5 to 8.5, and can be wet milled at a pH of at least 7 in such manner as to provide the micronized silica particles with excellent electrophoretic mobility, thereby providing a superb process for economical mass production of large pure silica preforms using safe voltages, such as 20 to 40 volts. The electrophoretic casting apparatus can be of the type shown in FIGS.

Abstract: Cup-shaped porous silica preforms suitable for manufacture of large 24-inch crucibles used in Czochralski crystal-growing furnaces are produced by a unique electrophoretic casting process using a high-purity aqueous silica slip or slurry having a predetermined particle-size distribution, an average particle size of from 6 to 10 microns and a solids content of from 80 to 85 percent by weight. The slurry contains an electrolyte, such as ammonium hydroxide, has a pH of from 7.5 to 8.5, and can be wet milled at a pH of at least 7 in such manner as to provide the micronized silica particles with excellent electrophoretic mobility, thereby providing a superb process for economical mass production of large pure silica preforms using safe voltages, such as 20 to 40 volts. The electrophoretic casting apparatus can be of the type shown in FIGS.

Abstract: A number of unique processes are disclosed for manufacture of sintered high-purity quartz glass products in which a shaped silica body or preform is made from an aqueous slurry of micronized silica particles by gel casting, slip casting or electrophoretic deposition. The silica particles may comprise a major portion by weight of crystalline silica. In one embodiment of the invention the sintered quartz glass is transparent, substantially bubble-free and suitable for scientific or optical uses. In another embodiment the porous silica preform is fired in steam to increase the hydroxyl content and then nitrided in a nitrogen-hydrogen reducing atmosphere. A minute amount of chemically-combined nitrogen in the high-purity quartz glass is sufficient to provide a tremendous improvement in physical properties and an incredible increase in the resistance to devitrification.

Abstract: The application discloses a number of unique sintered quartz glass products together with new silica compositions and processes for making and using such products. Nitrided clear and opaque nitrided quartz products are disclosed having incredible physical properties resulting from the incorporation of very small, but effective, amounts (e.g., 25 ppm or more) of chemically bound nitrogen. Opaque quartz glass heat shields with remarkable resistance to transmission of infrared radiation are disclosed which can have a high bubble population density, such as 80 to 120 per mm2. These heat shields make possible remarkable improvement in the performance of tube furnaces and other reactors used in processing silicon wafers and other electronic components.

Abstract: A number of unique processes are disclosed for manufacture of sintered high-purity quartz glass products in which a shaped silica body or preform is made from an aqueous slurry of micronized silica particles by gel casting, slip casting or electrophoretic deposition. The silica particles may comprise a major portion by weight of crystalline silica. In one embodiment of the invention the sintered quartz glass is transparent, substantially bubble-free and suitable for scientific or optical uses. In another embodiment the porous silica preform is fired in steam to increase the hydroxyl content and then nitrided in a nitrogen-hydrogen reducing atmosphere. A minute amount of chemically-combined nitrogen in the high-purity quartz glass is sufficient to provide a tremendous improvement in physical properties and an incredible increase in the resistance to devitrification.

Abstract: Unique cristobalite-seeded quartz glass crucibles and cores admirably suited for Cz crystal growing and D.S. metal casting are formed by slip casting using a slurry containing a quartz refractory composition comprising silica particles with an average particle size of from 1 to 10 microns and a minute but effective amount of micronized dispersible particles of a unique crystallization aid, such as basic aluminum acetate, which provides the glass with at least 0.005 percent by weight of evenly dispersed metallic ions. The metallic ions provide the quartz glass with nucleation sites so that heating of the glass to a temperature of from 1200.degree. C. to 1250.degree. C. permits formation of a high concentration of evenly dispersed cristobalite nuclei in the glass without causing excessive devitrification prior to cooling of the seeded glass. The desired nucleation sites can also be provided by using micronized particles of alpha quartz or alpha cristobalite.

Abstract: A high-density silica glass article with excellent thermal shock characteristics is formed from a high purity vitreous silica containing an aluminum compound as a crystallization aid and having a dense concentration of cristobalite muclei. The aluminum compound is aluminum oxide, aluminum hydroxide, an aluminum salt, or other aluminum-oxide precursor.A refractory silica glass crucible made according to the invention has remarkable advantages in a Czochralski crystal-growing process. The entire crucible can be crystallized during the initial melt down in the Cz furnace to provide a cristobalite inner surface which effectively resists attack by the molten silicon to minimize contamination problems during crystal growing.Another embodiment of the invention relates to a unique drawn silica glass with good flexural strength having fibrous oriented veins of cristobalite embedded in a matrix of vitreous silica and having remarkable resistance to deformation at temperatures of 1500.degree. C.

Abstract: A porous high-silica core is disclosed for use in directional solidification casting processes having exceptional thermal stability at temperatures above 1650.degree. C. and containing mineralizers which promote the formation of cristobalite. The cores may be made by mixing at least 75 parts of essentially pure fused silica particles with 1 to 25 parts of activating particles containing a mineralizer, such as an alkali metal or alkaline earth metal compound, may be fired at a temperature of 1000.degree. to 1300.degree. C. until they contain 35 percent or more of cristobalite and may then be cooled to room temperature. They may thereafter be incorporated in a shell mold in accordance with the "lost-wax" process and preheated with the shell mold at a temperature of 1300.degree. to 1600.degree. C. to provide a cristobalite content of 60 to 85 percent or more within a short period of time, such as 10 to 30 minutes, and before a molten superalloy is allowed to flow into the mold.

Abstract: A process is disclosed for making vitreous silica crucibles of exceptional high quality for use in the growing of a silicon crystal from molten silicon. The crucibles are formed from fine particles of high purity fused silica by slip casting or other suitable process, are dried and fired to provide a rigid porous body, and are thereafter sintered to a high density, preferably to the transparent state. The invention solves the problem of spalling, blistering and cracking during crystal growing and the resulting contamination of the molten silicon, which has long plagued the industry, by eliminating water from the fused silica particles before the porous body is sintered to the transparent state. Said body is thoroughly dried in a vacuum furnace at a high temperature and at a sub-atmospheric pressure low enough to remove the chemically bound water which cannot be removed by heat alone.

Abstract: Apparatus is disclosed for automated mass production of precision transparent silica glass products in accordance with a unique process in which slip-cast fused silica articles are rapidly heated and sintered in a vacuum or in a helium or hydrogen atmosphere at high temperatures, such as 2950.degree. to 3150.degree.F. A heated graphite susceptor shaped to conform to the outer surface of the fused silica article is automatically moved between a cooling zone and an induction furnace chamber which is opened momentarily to admit the article. The furnace and the graphite susceptor are designed to cause the trapped gases in the article to move radially outwardly and to effect rapid heating so as to avoid substantial devitrification during sintering.