Abstract: A networked object delivery system for a personal computing device includes a network, a personal computing device at least part time coupled to the network, and a service agent server at least part time coupled to the network. The personal computing device is preferably a PDA or the like, but can also include personal computers, laptop computers, notebook computers, etc. The personal computing device locally operates on a requested document with at least one downloaded application module from the network. The service agent server will download a requested document and at least one application module to the personal computing device over the network in response to a request for the document and in response to a desired action to be performed on that document.

Abstract: A networked object delivery system for a personal computing device includes a network, a personal computing device at least part time coupled to the network, and a service agent server at least part time coupled to the network. The personal computing device is preferably a PDA or the like, but can also include personal computers, laptop computers, notebook computers, etc. The personal computing device locally operates on a requested document with at least one downloaded application module from the network. The service agent server will download a requested document and at least one application module to the personal computing device over the network in response to a request for the document and in response to a desired action to be performed on that document.

Abstract: A networked object delivery system for a personal computing device includes a network, a personal computing device at least part time coupled to the network, and a service agent server at least part time coupled to the network. The personal computing device is preferably a PDA or the like, but can also include personal computers, laptop computers, notebook computers, etc. The personal computing device locally operates on a requested document with at least one downloaded application module from the network. The service agent server will download a requested document and at least one application module to the personal computing device over the network in response to a request for the document and in response to a desired action to be performed on that document.

Abstract: A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.

Abstract: There is disclosed an apparatus for controlling a physical layer interface of a network interface card. The apparatus comprises: 1) a read only memory (ROM) for storing an embedded control program; 2) a random access memory for storing a downloadable software control program; and 3) a microcontroller for controlling the physical layer interface, wherein the microcontroller in a first operating mode executes the embedded control program to thereby control the physical layer interface, and wherein the microcontroller in a second operating mode downloads the downloadable software control program from an external processing system and executes the software control program in place of the embedded control program to thereby control the physical layer interface.

Abstract: There is disclosed an apparatus for controlling a physical layer interface of a network interface card in real time. The apparatus comprises: 1) a first memory for storing a multitasking control program, the multitasking control program comprising a main routine and a plurality of subroutines callable by the main routine; 2) a second memory for storing a plurality of multitasking vectors associated with the multitasking control program; and 3) a microcontroller for executing the multitasking control program, wherein program execution control is transferred from the main routine to a first one of the plurality of subroutines when the first subroutine is called by the main routine and wherein the first subroutine, upon encountering a decision point in the first subroutine that is not yet capable of being decided, updates a first one of the plurality of multitasking vectors associated with the first subroutine with an address of the decision point and transfers program execution control back to the main routine.

Abstract: A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.

Abstract: An apparatus extends Ethernet-over-SONET services to provide point-to-multipoint service. Multiple optical channels are aggregated to form a single high speed channel to an attached router or switch. A traffic aggregation/trunking apparatus for a telecommunications system comprises a plurality of client data communication ports operable to communicate data traffic with client systems, a trunk port operable to communicate data traffic with a switch/router, and a processing block operable to process the communicated data traffic.

Abstract: A networked object delivery system for a personal computing device includes a network, a personal computing device at least part time coupled to the network, and a service agent server at least part time coupled to the network. The personal computing device is preferably a PDA or the like, but can also include personal computers, laptop computers, notebook computers, etc. The personal computing device locally operates on a requested document with at least one downloaded application module from the network. The service agent server will download a requested document and at least one application module to the personal computing device over the network in response to a request for the document and in response to a desired action to be performed on that document.

Abstract: A new composite material for process application is described in this document. The composite material combine a regular base material (10) and small particles (14) using a layer of adhesive (12). The base material can be a sheet (10), a molded packing ring medium (16), or a structured packing medium. The material made of the base material can be plastics, ceramics, metals, porous materials, adsorptive materials, etc. The particles can be activated carbons, charcoals, anthracites, sands, and glass beads. The bound particles increase the surface roughness and the surface area of the base material by providing valleys (20) and crevices (22).

Abstract: A program voltage of a first level is applied to the control gate of a PMOS floating gate memory cell to realize an injection of hot electrons induced by band-to-band tunneling (BTBT) into the floating gate of the cell. As the threshold voltage of the cell increases due to the accumulation of charge on the floating gate, the injection of BTBT induced hot electrons subsides. The program voltage is reduced to a second level which induces the injection of channel hot electrons (CHE) into the floating gate, thereby boosting the rate of charge accumulation on the floating gate.

Abstract: A nonvolatile memory array is disclosed which includes a plurality of PMOS two-transistor (2T) memory cells. Each 2T cell includes a PMOS floating gate transistor and a PMOS select transistor and is connected between a bit line and a common source line. The select gate and the control gate of each 2T cell in a common row are connected to a word line and to a control gate line, respectively. The 2T cells of the array are programmed using a combination of FN tunneling and BTBT induced hot electron injection, and are erased using FN tunneling. In some embodiments, the array is divided into sectors, where each sector is defined by an n- well region and includes a predetermined number of rows of the 2T cells. Here, the source of each 2T cell in a sector is coupled to a common source line of the sector. In other embodiments, the bit lines of the array are segmented along sector boundaries.

Abstract: A nonvolatile PMOS memory array includes a plurality of pages, where each column of a page includes two series-connected PMOS OR strings in parallel with a bit line. Each PMOS OR string includes a PMOS select transistor coupled between the bit line and two series connected PMOS floating gate memory cells. The PMOS floating gate memory cells are programmed via channel hot electron (CHE) injection and erased via electron tunneling. A soft-program mechanism is used to compensate for over-erasing of the memory cells. In some embodiments, the bit lines are segmented along page boundaries to increase speed.

Abstract: A P-channel single-poly EPROM cell has P+ source and P+ drain regions, and a channel extending therebetween, formed in an N-type well. A thin layer of tunnel oxide is provided over the channel and, in some embodiments, over significant portions of P+ source and P+ drain regions. A poly-silicon floating gate overlies the tunnel oxide. A P diffusion region is formed in a portion of the N-well underlying the floating gate and is thereby capacitively coupled to the floating gate. In this manner, the P diffusion region serves as a control gate for the memory cell. Programming is accomplished by coupling a sufficient voltage to the floating gate via the control gate while biasing the source and drain regions to cause the hot injection of electrons from the N-well/drain junction to the floating gate, while erasing is realized by biasing the floating gate, N-well, source and drain regions appropriately so as cause the tunneling of electrons from the floating gate to the N-well, the source, and the drain.

Abstract: A memory array includes a predetermined number of rows of PMOS Flash memory cells formed in each of a plurality of n- well regions of a semiconductor substrate, where each of the n- well regions defines a page of the memory array. In some embodiments, a plurality of bit lines define columns of the memory array, where the p+ drain of each of the memory cells in a common column are coupled to an associated one of the bit lines. In other embodiments, a plurality of sub-bit lines define columns of the memory array, where the p+ drain of each of the memory cells in a common column are coupled to an associated one of the sub-bit lines, and groups of a predetermined number of the sub-bit lines are selectively coupled to associated ones of a plurality of bit lines via pass transistors.

Abstract: A P-channel single-poly non-volatile memory cell having P+ source and P+ drain regions and a channel extending therebetween is formed in an N-type well. An overlying poly-silicon floating gate is separated from the N-well by a thin oxide layer. A P-type diffusion region is formed in a portion of the N-well underlying the floating gate and is thereby capacitively coupled to the floating gate. Within this P-type diffusion area lies an N-type diffusion area which serves as the control gate for the cell. The P-type diffusion region electrically isolates the control gate from the N-well such that voltages may be applied to the control gate in excess of those applied to the N-well without creating a current path from the control gate to the N-well. Programming is accomplished by coupling a sufficient voltage to the floating gate via the control gate while biasing the source and drain regions so as to cause the tunneling of electrons from the P+ drain region of the cell to the floating gate.

Abstract: A P-channel single-poly EPROM cell has P+ source and P+ drain regions, and a channel extending therebetween, formed in an N-type well. A thin layer of tunnel oxide is provided over the channel and, in some embodiments, over significant portions of P+ source and P+ drain regions. A poly-silicon floating gate overlies the tunnel oxide. A P diffusion region is formed in a portion of the N-well underlying the floating gate and is thereby capacitively coupled to the floating gate. In this manner, the P diffusion region serves as a control gate for the memory cell. Programming is accomplished by coupling a sufficient voltage to the floating gate via the control gate while biasing the source and drain regions to cause the hot injection of electrons from the N-well/drain junction to the floating gate, while erasing is realized by biasing the floating gate, N-well, source and drain regions appropriately so as cause the tunneling of electrons from the floating gate to the N-well, the source, and the drain.

Abstract: A semiconductor fabrication process allows for the fabrication of high-voltage transistors, logic transistors, and memory cells where, as required for sub-0.3 micron device geometries, the gate oxide of the logic transistors is thinner than the tunnel oxide thickness of the non-volatile memory cells without the undesirable contamination of the gate oxide of the logic transistors or contamination of the tunnel oxide of the memory cells. In one embodiment, the tunnel oxide of the memory cells is grown to a desired thickness. In a next step, a layer of doped polysilicon which will serve as the floating gate of the memory cell(s) is immediately deposited over the tunnel oxide of the memory cells, thereby protecting the tunnel oxide from contamination in subsequent masking and etching steps. The gate oxide of the logic transistors and the gate oxide of the high-voltage transistors are then grown to a desired thickness.

Abstract: A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin tunnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying select and control gate is insulated from the floating gate by an insulating layer. The select and control gate including an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased. Since there is no high drain/well junction bias voltage, the channel length of the cell may be reduced without incurring and destructive junction stress.

Abstract: A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin runnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying control gate is insulated from the floating gate by a first insulating layer. An overlying select gate is insulated from the control gate by an insulating layer. The select gate includes an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased.