Abstract: The present invention provides a method for etching a substrate, a method for forming an integrated circuit, an integrated circuit formed using the method, and an integrated circuit. The method for etching a substrate includes, among other steps, providing a substrate 140 having an aluminum oxide etch stop layer 130 located thereunder, and then etching an opening 150, 155, in the substrate 140 using an etchant comprising carbon oxide, a fluorocarbon, an etch rate modulator, and an inert carrier gas, wherein a flow rate of the carbon oxide is greater than about 80 sccm and the etchant is selective to the aluminum oxide etch stop layer 130. The aluminum oxide etch stop layer may also be used in the back-end of advanced CMOS processes as a via etch stop layer.

Abstract: Integrated circuit structures comprising an embedded ferroelectric memory cell and methods of forming the same are described. These structures include a transistor level, a ferroelectric device level, a first metal level, an inter-level dielectric level and a second metal level. In a first embodiment, the ferroelectric device level is disposed over an isolation layer of the transistor level and an isolation layer of the ferroelectric level has one or more vias that are laterally sized larger than corresponding contact vias extending through the transistor isolation layer and aligned therewith. In a second embodiment, the first metal level and the ferroelectric device level are integrated into the same level. In a third embodiment, the ferroelectric device level is disposed over the first metal level. In a fourth embodiment, the ferroelectric device level is disposed over the inter-level dielectric level that, in turn, is disposed over the first metal level.

Abstract: The present disclosure relates to a post-etch cleaning treatment for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semiconductor device in a wet cleaning process.

Abstract: Integrated circuit structures comprising an embedded ferroelectric memory cell and methods of forming the same are described. These structures include a transistor level, a ferroelectric device level, a first metal level, an inter-level dielectric level and a second metal level. In a first embodiment, the ferroelectric device level is disposed over an isolation layer of the transistor level and an isolation layer of the ferroelectric level has one or more vias that are laterally sized larger than corresponding contact vias extending through the transistor isolation layer and aligned therewith. In a second embodiment, the first metal level and the ferroelectric device level are integrated into the same level. In a third embodiment, the ferroelectric device level is disposed over the first metal level. In a fourth embodiment, the ferroelectric device level is disposed over the inter-level dielectric level that, in turn, is disposed over the first metal level.