Patents by Inventor Ted Sargent

Ted Sargent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260062611
    Abstract: A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode. The thin film may be a hole transport layer that includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.
    Type: Application
    Filed: November 5, 2025
    Publication date: March 5, 2026
    Inventors: Eun Joo JANG, Kwanghee KIM, Seungjin Lee, Ted Sargent
  • Patent number: 12503646
    Abstract: A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: December 23, 2025
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
    Inventors: Eun Joo Jang, Kwanghee Kim, Seungjin Lee, Ted Sargent
  • Publication number: 20220325179
    Abstract: A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.
    Type: Application
    Filed: March 30, 2022
    Publication date: October 13, 2022
    Inventors: Eun Joo JANG, Seungjin Lee, Ted Sargent, Kwanghee KIM, Yuho WON
  • Publication number: 20220290048
    Abstract: A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.
    Type: Application
    Filed: March 8, 2022
    Publication date: September 15, 2022
    Inventors: Eun Joo JANG, Kwanghee KIM, Seungjin Lee, Ted Sargent
  • Patent number: 6891666
    Abstract: An optical amplifier has two amplifying sections formed in a semiconductor structure. The two amplifying sections have different ratios of gain for two polarization states (e.g., TE and TM). Thus the amplifier as a whole has a gain ratio determined by the gains of the two amplifying sections. The two amplifying sections are separately electronically controllable so as to control the gains of the two amplifying sections and thus the gain ratio of the amplifier as a whole. Such an amplifier can be made by quantum well intermixing.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: May 10, 2005
    Assignee: Fox-Tek, Inc.
    Inventors: Geoff Darling, Ted Sargent
  • Publication number: 20040196541
    Abstract: An optical amplifier has two amplifying sections formed in a semiconductor structure. The two amplifying sections have different ratios of gain for two polarization states (e.g., TE and TM). Thus the amplifier as a whole has a gain ratio determined by the gains of the two amplifying sections. The two amplifying sections are separately electronically controllable so as to control the gains of the two amplifying sections and thus the gain ratio of the amplifier as a whole. Such an amplifier can be made by quantum well intermixing.
    Type: Application
    Filed: March 11, 2003
    Publication date: October 7, 2004
    Applicant: Fox-Tek, Inc.
    Inventors: Geoff Darling, Ted Sargent