Abstract: A CMOS buffer receiver is provided for converting TTL or CMOS input voltage signals to CMOS signals so as to drive CMOS loads on VSLI chips. The buffer receiver comprises a reference voltage generator coupled to a compensation network having an output signal which varies with process, temperature and voltage supply. The compensated output signal is coupled to the gates of any number of current source load transistors of a plurality of series connected transistor pairs which comprise individual stabilized input converters all of which have their switchpoint located in the middle of their characteristic curves so that their switchpoints are immune to process, temperature and supply voltage variations.

Abstract: A novel high speed gallium arsenide depletion mode field effect transistor logic circuit is provided. One logic input is connected to the source electrode of the switching transistor and draws current when a low level input voltage is provided. Other logic inputs are connected to the gate electrode of the switching transistor and supplies current when a high or low level input voltage is provided. The novel logic output from the source electrode of the switching transistor is a complex OR function which may be employed for a logic family having fewer stages of logic than prior art gallium arsenide circuits.

Abstract: An improved high speed gallium arsenide (GaAs) to emitter coupled logic (ECL) voltage level converter is provided which consumes less power and also provides an improved speed-power product performance characteristic. The converter includes a three branch output circuit which emulates the operation of an ECL output driver. The emulator circuit causes faster switching by compensating for parasitic resistances and capacitance and is also provided with a gate discharge network which reduces switching time of the ECL output emulator.

Abstract: A gallium arsenide buffer amplifier for use in a very large scale integrated circuits is provided. The transistor device in the buffer amplifier has a uniform depth N+ source, gate and drain region and the N+ dopant concentration is made very high which effectively reduces the resistance of the transistor device and permits the area of the device to be reduced by more than one order of magnitude while maintaining high current and power levels.

Abstract: A high speed gallium arsenide (GaAs) integrated circuit is provided which converts GaAs input or source signals to voltage levels for directly driving emitter coupled logic (ECL) circuits. The high speed GaAs level converter comprises a level shifting network at the input, two stages of differential amplification and a novel source follower output stage.

Abstract: The present invention provides a high-speed low-power gallium arsenide basic logic circuit which is capable of being driven by either emitter coupled logic or gallium arsenide logic level signals to provide combinational logic gating such as OR-AND, OR-NAND, OR-AND-OR and OR-AND-NOR capable of driving directly either emitter coupled logic or gallium arsenide logic circuits. The combinational logic gating is basically accomplished by diode logic which performs other functions and which requires less area on an integrated circuit chip than active switching transistors.

Abstract: This invention provides a novel high-gain stabilized converter circuit which is adapted to convert emitter coupled logic (ECL) signals for use in gallium arsenide (Ga As) circuits. The novel converter is adapted to be made in gallium arsenide logic on the same chip as the logic circuitry which it is driving. The converter includes a novel differential amplifier having a level shifting network at the active input and a second level shifting network at the reference input to provide a stabilized high-gain circuit which is compensated for variations in temperature and process deviations.