Abstract: A composition, process, and device are disclosed. The composition includes a polymer formed by reacting an epoxy compound with an amine curing agent. The epoxy compound comprises a Diels-Alder dimer and an ester moiety. The process includes providing a polymer formed by reacting the epoxy compound with the amine curing agent. The device includes a material that includes the polymer.

Abstract: Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

Abstract: Integrated circuits including at least two electrically conductive interconnect lines and methods of manufacturing generally include a surface of the integrated circuit. At least two electrically conductive interconnect lines are separated by a space of less than 90 nm and are formed on the surface. Each of the at least two interconnect lines includes a metal cap, a copper conductor having an average grain size greater than a line width of the interconnect. A liner layer is provided, wherein the liner layer and the metal cap encapsulate the copper conductor. A dielectric layer overlaying the at least two electrically conductive interconnect lines and extending along sidewalls thereof is provided, wherein the dielectric layer is configured to provide an airgap between the at least two interconnect lines at the spacing.

Abstract: Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

Abstract: Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

Abstract: A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200° C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225° C. The invention includes production of a product by this process and an article of manufacture embodying these features.

Abstract: An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids.

Abstract: Integrated circuits including at least two electrically conductive interconnect lines and methods of manufacturing generally include a surface of the integrated circuit. At least two electrically conductive interconnect lines are separated by a space of less than 90 nm and are formed on the surface. Each of the at least two interconnect lines includes a metal cap, a copper conductor having an average grain size greater than a line width of the interconnect. A liner layer is provided, wherein the liner layer and the metal cap encapsulate the copper conductor. A dielectric layer overlaying the at least two electrically conductive interconnect lines and extending along sidewalls thereof is provided, wherein the dielectric layer is configured to provide an airgap between the at least two interconnect lines at the spacing.

Abstract: Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

Abstract: A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L? in which none of the fluorines of L? are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

Abstract: A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200° C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225° C. The invention includes production of a product by this process and an article of manufacture embodying these features.

Abstract: Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L? joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L? are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L? has a lower surface energy than each of the polymer blocks.

Abstract: An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids.

Abstract: High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L? comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

Abstract: An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.

Abstract: High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L? comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

Abstract: A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L? in which none of the fluorines of L? are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

Abstract: A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200° C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225° C. The invention includes production of a product by this process and an article of manufacture embodying these features.

Abstract: Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L? joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L? are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L? has a lower surface energy than each of the polymer blocks.

Abstract: An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.