Patents by Inventor Teddy C. T. To

Teddy C. T. To has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10998719
    Abstract: An apparatus may include a transient voltage suppression (TVS) device array coupled to a first input terminal and a second input terminal; and a linear regulator module having a pair of inputs connected to a respective pair of outputs of the TVS device array, wherein the TVS device array includes at least one TVS diode is connected between a first output and second output of the pair of outputs to generate a first clamping voltage signal, and wherein the linear regulator module is configured to generate a second clamping voltage signal having a second clamping voltage independent of a first clamping voltage of the first clamping voltage signal received from the TVS device array.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: May 4, 2021
    Assignee: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Teddy C. T. To, Wei hua Tian
  • Patent number: 10714240
    Abstract: An overvoltage protection device (100) may include a metal oxide varistor (MOV) (102) having a first surface (114) and a second surface (116); a semiconductor substrate (202) having a first outer surface (126) and a second outer surface (128) and comprising a semiconductor crowbar device (104) comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate (202) being disposed on a first side of the metal oxide varistor (102), a conductive region (124) disposed between the second surface (116) of the MOV (102) and the first outer surface (126) of the semiconductor substrate (202); a first electrical contact (120) disposed on the first surface (114) of the MOV (102); and a second electrical contact (122) disposed on the second outer surface (128) of the semiconductor substrate (202).
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: July 14, 2020
    Assignee: Littlefuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Teddy C. T. To, Chuanfang Chin, Yaosheng Du
  • Patent number: 10714241
    Abstract: In one embodiment, an overvoltage protection device may include a metal oxide varistor (MOV) having a first surface and a second surface; a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor; a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate; a first electrical contact disposed on the first surface of the MOV; and a second electrical contact disposed on the second outer surface of the semiconductor substrate.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: July 14, 2020
    Assignee: LITTELFUSE SEMICONDUCTOR (WUXI) CO., LTD.
    Inventors: Teddy C. T. To, ChuanFang Chin, Yaosheng Du
  • Publication number: 20200136379
    Abstract: An apparatus may include a transient voltage suppression (TVS) device array coupled to a first input terminal and a second input terminal; and a linear regulator module having a pair of inputs connected to a respective pair of outputs of the TVS device array, wherein the TVS device array includes at least one TVS diode is connected between a first output and second output of the pair of outputs to generate a first clamping voltage signal, and wherein the linear regulator module is configured to generate a second clamping voltage signal having a second clamping voltage independent of a first clamping voltage of the first clamping voltage signal received from the TVS device array.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 30, 2020
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Teddy C.T. TO, Wei hua TIAN
  • Publication number: 20200135367
    Abstract: In one embodiment, an overvoltage protection device may include a metal oxide varistor (MOV) having a first surface and a second surface; a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor; a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate; a first electrical contact disposed on the first surface of the MOV; and a second electrical contact disposed on the second outer surface of the semiconductor substrate.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 30, 2020
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Teddy C.T. To, ChuanFang Chin, Yaosheng Du
  • Publication number: 20190140444
    Abstract: An apparatus may include a transient voltage suppression (TVS) device array coupled to a first input terminal and a second input terminal; and a linear regulator module having a pair of inputs connected to a respective pair of outputs of the TVS device array, wherein the TVS device array includes at least one TVS diode is connected between a first output and second output of the pair of outputs to generate a first clamping voltage signal, and wherein the linear regulator module is configured to generate a second clamping voltage signal having a second clamping voltage independent of a first clamping voltage of the first clamping voltage signal received from the TVS device array.
    Type: Application
    Filed: April 15, 2016
    Publication date: May 9, 2019
    Inventors: Teddy C.T TO, Wei hua TIAN
  • Publication number: 20180240575
    Abstract: An overvoltage protection device (100) may include a metal oxide varistor (MOV) (102) having a first surface (114) and a second surface (116); a semiconductor substrate (202) having a first outer surface (126) and a second outer surface (128) and comprising a semiconductor crowbar device (104) comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate (202) being disposed on a first side of the metal oxide varistor (102), a conductive region (124) disposed between the second surface (116) of the MOV (102) and the first outer surface (126) of the semiconductor substrate (202); a first electrical contact (120) disposed on the first surface (114) of the MOV (102); and a second electrical contact (122) disposed on the second outer surface (128) of the semiconductor substrate (202).
    Type: Application
    Filed: August 13, 2015
    Publication date: August 23, 2018
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd
    Inventors: Teddy C. T. To, Chuanfang Chin, Yaosheng DU