Abstract: A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: An ultra-low clamping voltage Surge Protection Module (SPM) is disclosed which utilizes a depletion mode MOSFET (D MOSFET). The SPM may be part of a circuit or a device and includes a primary protection stage and a secondary protection stage, with the D MOSFET being connected between the two stages. The SPM may include a single D MOSFET, dual D MOSFETs, or multiple D MOSFETs and the primary and secondary protection stages may be implemented with a number of different components. The SPM using D MOSFET(s) exhibits improved surge protection over circuits using inductors.

Abstract: Circuits for providing overcurrent protection are disclosed herein. The circuits feature depletion mode MOSFETs connected to resistive elements, preferably, Positive Temperature Coefficient (PTC) devices, configured in such a way so that the voltage across the PTC device is the same as the gate-to-source voltage of the MOSFET. The circuit may further be configured using a TVS diode, for clamping the drain-to-source voltage of the MOSFET during the overcurrent events. Heat transfer between the MOSFET and the PTC device facilitates overcurrent protection. A two-terminal device including a depletion mode MOSFET, a PTC device, and a TVS diode may provide overcurrent protection to other circuits. A bidirectional circuit c including two MOSFETS disposed on either side of a PTC is also contemplated for AC voltage overcurrent protection.

Abstract: Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: In one embodiment, an overvoltage protection device (100) may include a crowbar device (106), where the crowbar device (106) includes a first crowbar terminal (115), the first crowbar terminal (115) connected with a first external voltage line (102). The overvoltage protection device (100) may further include a transient voltage suppression (TVS) device (108), where the TVS device (108) includes a second TVS terminal (121), the second TVS terminal (121) connected with a second external voltage line (104). The crowbar device (106) and the TVS device (108) may be arranged in electrical series between the first crowbar terminal (115) and the second TVS terminal (121).

Abstract: An ultra-low clamping voltage Surge Protection Module (SPM) is disclosed which utilizes a depletion mode MOSFET (D MOSFET). The SPM may be part of a circuit or a device and includes a primary protection stage and a secondary protection stage, with the D MOSFET being connected between the two stages. The SPM may include a single D MOSFET, dual D MOSFETs, or multiple D MOSFETs and the primary and secondary protection stages may be implemented with a number of different components. The SPM using D MOSFET(s) exhibits improved surge protection over circuits using inductors.

Abstract: A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: Circuits for providing overcurrent protection are disclosed herein. The circuits feature depletion mode MOSFETs connected to resistive elements, preferably, Positive Temperature Coefficient (PTC) devices, configured in such a way so that the voltage across the PTC device is the same as the gate-to-source voltage of the MOSFET. The circuit may further be configured using a TVS diode, for clamping the drain-to-source voltage of the MOSFET during the overcurrent events. Heat transfer between the MOSFET and the PTC device facilitates overcurrent protection. A two-terminal device including a depletion mode MOSFET, a PTC device, and a TVS diode may provide overcurrent protection to other circuits. A bidirectional circuit c including two MOSFETS disposed on either side of a PTC is also contemplated for AC voltage overcurrent protection.

Abstract: In one embodiment, an overvoltage protection device (100) may include a crowbar device (106), where the crowbar device (106) includes a first crowbar terminal (115), the first crowbar terminal (115) connected with a first external voltage line (102). The overvoltage protection device (100) may further include a transient voltage suppression (TVS) device (108), where the TVS device (108) includes a second TVS terminal (121), the second TVS terminal (121) connected with a second external voltage line (104). The crowbar device (106) and the TVS device (108) may be arranged in electrical series between the first crowbar terminal (115) and the second TVS terminal (121).