Abstract: A semiconductor substrate of the present invention is made of nitrides of group III metals having wurtzite crystal structure and is grown in vapor phase either on a (0001) oriented foreign substrate (2), lattice mismatched to the semiconductor substrate materials, or on existing (0001) oriented highly dislocated layer (3) of the semiconductor substrate materials and has a highly reduced dislocation density.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A semiconductor substrate (1) of the present invention is made of nitrides of group III metals having wurtzite crystal structure and is grown in vapor phase either on a (0001) oriented foreign substrate (2), lattice mismatched to the semiconductor substrate materials, or on existing (0001) oriented highly dislocated layer (3) of the semiconductor substrate materials and has a highly reduced dislocation density.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, and from which pulses are released toward the reaction space. A pulse control device is preferably interposed between the staging volume and the reaction space. A sensor may sense a physical condition in the staging volume for providing feedback to a controller of the precursor delivery system, for performance monitoring and control.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. At least a portion of the flow path may be formed in one or more blocks of thermally conductive material forming an elongate thermally conductive body extending from the precursor container toward the reaction space. In some embodiments, a heater is thermally associated with the thermally conductive body to inhibit condensation of precursor vapor in the flow path. A high conductivity particle filter having inertial traps is preferably included for filtering particles from the precursor material. The particle filter preferably include a filter passage including turns and inertial traps adjacent the turns. In some embodiments, the filter passage and the inertial traps may be formed in the thermally conductive body between the precursor container and the reaction space.

Abstract: A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.