Abstract: A method of manufacturing a solid image pick-up device comprising a photoelectronic conversion portion, a charge transfer portion and a peripheral circuit portion, the method comprising: forming a pattern comprising a first layer silicon conductive film to a surface of a semiconductor, the first layer silicon conductive film forming: a first electrode; and a first layer interconnection for the photoconductive conversion portion and the peripheral circuit portion; forming an insulative film at least to a side wall of the first electrode; forming a second silicon conductive film being to form a second electrode to the semiconductor substrate; coating a resist over the semiconductor substrate by a spin coating method; and planarizing the second layer silicon conductive film by a resist etching-back method, wherein the pattern further comprises at least one dummy pattern, and a surface level of the resist is not below a predetermined value over the semiconductor substrate.

Abstract: The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without lowering withstand voltage between charge transfer electrodes. A first insulation film is formed on the surface of a silicon substrate, and inter-electrode insulation films made of silicon oxide films and charge transfer electrodes made of polycrystalline silicon films are formed on the surface of the first insulation film. The inter-electrode insulation films are formed from side walls of the polycrystalline silicon films.

Abstract: The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without lowering withstand voltage between charge transfer electrodes. A first insulation film is formed on the surface of a silicon substrate, and inter-electrode insulation films made of silicon oxide films and charge transfer electrodes made of polycrystalline silicon films are formed on the surface of the first insulation film. The inter-electrode insulation films are formed from side walls of the polycrystalline silicon films.

Abstract: Each transfer electrode of a charge transfer unit is made of a main electrode layer and subsidiary electrode layers formed on the side walls of the main electrode layer. The upper surfaces of the transfer electrodes are flush with each other. A charge coupled device having a practically sufficient charge transfer efficiency can be provided. If this charge coupled device is used for an image pickup apparatus, the distance between photoelectric conversion elements and micro lenses can be shortened.

Abstract: The invention is to provide a solid image pickup device having high electric pressure proof between charge transfer electrodes of mono-layered structure, and enabling to drive at high speed with low consumption electric power. In this invention, a silicone base is formed on a surface thereof with an insulating film, on a surface of which inter-electrode insulating films of an oxidized silicone film and charge transfer electrodes are provided. The charge transfer electrode includes an adhesion film so formed as to cover a side wall of the inter-electrode insulating film and a gate insulating film as well as a conductive film containing metals in an area surrounded with the adhesion film. The adhesion film is formed with, e.g., polycrystalline silicone of highly dense dope, while the conductive film is formed with, e.g., a tungsten layer. The charge transfer electrode is formed on the upper face with the oxidized silicone film.

Abstract: The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without lowering withstand voltage between charge transfer electrodes. A first insulation film is formed on the surface of a silicon substrate, and inter-electrode insulation films made of silicon oxide films and charge transfer electrodes made of polycrystalline silicon films are formed on the surface of the first insulation film. The inter-electrode insulation films are formed from side walls of the polycrystalline silicon films.

Abstract: The invention is to provide a solid image pickup device having high electric pressure proof between charge transfer electrodes of mono-layered structure, and enabling to drive at high speed with low consumption electric power. In this invention, a silicone base is formed on a surface thereof with an insulating film, on a surface of which inter-electrode insulating films of an oxidized silicone film and charge transfer electrodes are provided. The charge transfer electrode includes an adhesion film so formed as to cover a side wall of the inter-electrode insulating film and a gate insulating film as well as a conductive film containing metals in an area surrounded with the adhesion film. The adhesion film is formed with, e.g., polycrystalline silicone of highly dense dope, while the conductive film is formed with, e.g., a tungsten layer. The charge transfer electrode is formed on the upper face with the oxidized silicone film.

Abstract: Each transfer electrode of a charge transfer unit is made of a main electrode layer and subsidiary electrode layers formed on the side walls of the main electrode layer. The upper surfaces of the transfer electrodes are flush with each other. A charge coupled device having a practically sufficient charge transfer efficiency can be provided. If this charge coupled device is used for an image pickup apparatus, the distance between photoelectric conversion elements and micro lenses can be shortened.