Abstract: Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

Abstract: A carbon fiber bundle includes carbon fibers and a copolymerized polyolefin attached to the surface of the carbon fibers. The copolymerized polyolefin contains an aromatic vinyl compound and an acid and/or acid anhydride as copolymerization components. The amount of the copolymerized polyolefin attached is 0.01 to 10 parts by mass per 100 parts by mass of the carbon fiber bundle. The carbon fiber bundle may be used or contained in a random mat, a composite material, and various molded articles.