Patents by Inventor Teina L. Pardue

Teina L. Pardue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench forming process and integrated circuit device including a trench
    Patent number: 6103635
    Abstract: A process for forming a trench in a semiconductor material is provided. The process includes (a) providing a semiconductor substrate, a first mask layer adjacent the surface of the semiconductor substrate, and a second mask layer adjacent the surface of the first mask layer, the second mask layer defining a first open area and the first mask layer defining a second open area that is larger than the first open area and aligned therewith in a manner so that in the area of the openings the first mask layer is undercut with respect to the second mask layer; and (b) removing a portion of the semiconductor substrate through the open area defined by the second mask layer to form a trench in said semiconductor substrate. An IC device formed using the process is also provided.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: August 15, 2000
    Assignee: Fairchild Semiconductor Corp.
    Inventors: Duc Q Chau, Brian Sze-Ki Mo, Teina L. Pardue