Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

Abstract: Methods and apparatus for determining a parameter of a structure fabricated in or on a substrate and compensated for a drift error. The methods comprising: illuminating, at a plurality of times, at least part of the structure with electromagnetic radiation, the at least part of the structure being at a first orientation; sensing, at the plurality of times, a plurality of average reflectances of the at least part of the structure; and determining, based on the plurality of average reflectances, an estimation of the parameter at one or more further times.

Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.

Abstract: Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.

Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

Abstract: Methods and apparatus for directing onto a substrate a radiation beam emitted as a result of high harmonic generation (HHG).

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Abstract: Methods and apparatus for directing onto a substrate a radiation beam emitted as a result of high harmonic generation (HHG).

Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

Abstract: Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing relative movement of the diffraction structure relative to the radiation beam from a first position wherein the radiation beam does not irradiate the diffraction structure to a second position wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining the intensity profile of the radiation beam based on the measured diffracted radiation signals.

Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Abstract: Passage through LINACs of electron bunches in their acceleration phase is coordinated with passage through the LINACs of electron bunches in their deceleration phase. Each successive pair of electron bunches are spaced in time by a respective bunch spacing, in accordance with a repeating electron bunch sequence. The electron source provides clearing gaps in the electron bunch sequence to allow clearing of ions at the undulator. The electron source provides the clearing gaps in accordance with a clearing gap sequence such that, for each of the plurality of energy recovery LINACS, and for substantially all of the clearing gaps: for each passage of the clearing gap through the LINAC in an acceleration phase or deceleration phase the clearing gap is coordinated with a further one of the clearing gaps passing through the LINAC in a deceleration phase or acceleration phase thereby to maintain energy recovery operation of the LINAC.

Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Abstract: Passage through LINACs of electron bunches in their acceleration phase is coordinated with passage through the LINACs of electron bunches in their deceleration phase. Each successive pair of electron bunches are spaced in time by a respective bunch spacing, in accordance with a repeating electron bunch sequence. The electron source provides clearing gaps in the electron bunch sequence to allow clearing of ions at the undulator. The electron source provides the clearing gaps in accordance with a clearing gap sequence such that, for each of the plurality of energy recovery LINACS, and for substantially all of the clearing gaps: for each passage of the clearing gap through the LINAC in an acceleration phase or deceleration phase the clearing gap is coordinated with a further one of the clearing gaps passing through the LINAC in a deceleration phase or acceleration phase thereby to maintain energy recovery operation of the LINAC.

Abstract: An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

Abstract: An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.