Abstract: A method of manufacturing a thin film transistor with a reduced number of manufacturing steps is provided, in which the possibility of light entering the channel forming layer of the thin film transistor can be obviated. The thin film transistor comprising a gate electrode (16a), a drain electrode (12a), a source electrode (17a) and a channel (24) and a shield layer (21) on a transparent substrate (20). The channel (24) is formed in that a channel forming layer is photolithographically patterned with the shield layer (21) as mask. As shield layer (21), the gate electrode (16a) can be used, this giving a bottom gate thin film transistor. The transistor is very suitable for use in a liquid crystal display.

Abstract: To provide a liquid crystal display device using a diffusing reflective construction in which a reflective film having a roughened surface can be formed by a simple process and to provide a manufacturing method for it. A liquid crystal display device with a diffusing reflective construction (7, 8) having a function of optical diffusion by which incident light is reflected while being diffused. The diffusing reflective construction comprising: a basic figure layer (7) formed on a base layer (1, 20), which has a roughened surface; and an optically reflective layer (8) formed on the basic figure layer (7), which presents a roughened surface along the roughened surface of the basic figure layer. The basic figure layer (7) is formed from a radiation- or thermo-sensitive resin material whose surface is provided with roughness by means of decompression drying treatment.

Abstract: A method of manufacturing a thin film transistor with a reduced number of manufacturing steps is provided, in which the possibility of light entering the channel forming layer of the thin film transistor can be obviated. The thin film transistor comprising a gate electrode (16a), a drain electrode (12a), a source electrode (17a) and a channel (24) and a shield layer (21) on a transparent substrate (20). The channel (24) is formed in that a channel forming layer is photolithographically patterned with the shield layer (21) as mask. As shield layer (21), the gate electrode (16a) can be used, this giving a bottom gate thin film transistor. The transistor is very suitable for use in a liquid crystal display.

Abstract: In an active matrix liquid crystal display device in which source and gate buses are arranged in a matrix form, thin film transistors are provided at intersections of the source and gate buses and display electrodes are driven by applying voltage thereto via the thin film transistors, source and gate bus repair conductive layers are provided which extend along the source buses in opposing relation thereto across an insulating layer. When any one of the source or gate buses is broken, the repair conductive layer and the broken bus can be connected at both side of the broken portion by laser welding.

Abstract: One end portion of each pixel electrode is extended under a gate insulating film underlying the neighboring gate bus and defines an additional capacitance region. The extended portion of the pixel electrode is divided into a plurality of comb-tooth-like electrodes, each defining divided additional capacitors. One of the comb-tooth-like electrodes is separated by a gap from the pixel electrode, and first and second electrodes for laser welding use are formed on the comb-tooth-like electrode and the pixel electrode facing each other across the gap. The first and second electrodes form series-connected first and second capacitances for laser welding use between them and a third electrode for laser welding use formed above them with a gate insulating film interposed therebetween.

Abstract: Liquid crystal is sealed in between a pair of opposed first and second transparent substrates, picture element electrodes, gate buses, and source buses are formed on the first transparent substrate, and thin film transistors are each disposed at one of the intersections of the source and gate buses, thereby constituting an active matrix liquid crystal display element. On the first transparent substrate there are provided capacitive electrodes respectively opposite the source buses, with an insulating layer interposed therebetween, and the capacitive electrodes are connected to a common potential point.