Abstract: A semiconductor device includes a first memory array, a first bit line, a second memory array, a second bit line, a first conductive line and a first control circuit. The first bit line crosses over and is coupled to the first memory array, and extends along a first direction. The second bit line crosses over the second memory array, and is coupled to the first bit line. The first conductive line crosses over the second memory array and a part of the first memory array, and is configured to operate as a part of a first capacitor. The first control circuit is configured to couple the first conductive line to the second bit line when the first memory array is written.

Abstract: A semiconductor device includes a first memory bank, a second memory bank and a first write driver. The first memory bank is coupled to a plurality of first data lines, and configured to operate according to a first data signal. The second memory bank is configured to operate according to the first data signal. The first write driver is disposed between the first memory bank and the second memory bank, and configured to adjust a voltage level of one of the plurality of first data lines when the first memory bank is written according to the first data signal.

Abstract: A circuit includes a master latch circuit and a slave latch circuit. The master latch circuit is configured to receive an input data signal associated with an input data voltage domain and generate a first output data signal associated with an output data voltage domain different from the input data voltage domain. The slave latch circuit is configured to receive, from the master latch circuit, the first output data signal and generate a second output data associated with the output data voltage domain.

Abstract: An example read address generation circuit for a static random access memory (SRAM) cell includes an operational amplifier having a non-inverting input coupled to a reference voltage, a memory emulation circuit having an output coupled to an inverting input of the operational amplifier and a control input coupled to an output of the operational amplifier, and a multiplexer having a first input coupled to receive a constant read voltage, a second input coupled to the output of the operational amplifier, and an output coupled to supply a read address voltage to the SRAM cell.