Abstract: Substrates, assemblies, and techniques for enabling a dual pedestal for resistive random access memory are disclosed herein. For example, in some embodiments, a device may include a substrate, wherein the substrate includes a fill metal, a first pedestal on the substrate, wherein the first pedestal is over the fill metal, and a second pedestal over the first pedestal, where the second pedestal is a bottom electrode for a memory cell. In an example, the first pedestal extends at least a length of the fill metal and the second pedestal extends less than a length of the first pedestal. In addition, the device can include a memory cell over the second pedestal.

Abstract: Described herein are techniques structures related to forming barrier walls, capping, or alloys/compounds such as treating copper so that an alloy or compound is formed, to reduce electromigration (EM) and strengthen metal reliability which degrades as the length of the lines increases in integrated circuits.