Abstract: A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates.

Abstract: A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates.