Abstract: Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing.

Abstract: A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGex (x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGex. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.

Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.