Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.

Abstract: The present invention concerns a disc brake locking assembly. Specifically, a lock is employed to control the up-down movement of a controlling cotter, and the disc brake locking assembly is placed in the locked position by causing the catch on the front of the controlling cotter to bind to the catch section of a locking rod. Said disc brake locking assembly possesses a moving piece. The top of said moving piece is equipped with a protruding pin, and the bottom of said moving piece is equipped with a slot A into which a spring is to be inserted. Said moving piece also possesses another slot B. A pin is installed into the main body in such a manner that allows one end of said pin to penetrate through said main body and join with the slot B in the moving piece. The restitution action of the spring allows said moving piece to move back and forth axially within a specified range. The left side of said moving piece is also equipped with a round slot into which a spring and locking rod are inserted in said order.