Patents by Inventor Teng-Kuei CHUANG

Teng-Kuei CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS FOR IMPROVING CRITICAL DIMENSION VARIATION
    Publication number: 20230195000
    Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Inventors: Ming-Hsun LIN, Yu-Hsiang HO, Jhun Hua CHEN, Chi-Hung LIAO, Teng Kuei CHUANG
  • Method and apparatus for improving critical dimension variation
    Patent number: 11579539
    Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.
    Type: Grant
    Filed: July 20, 2021
    Date of Patent: February 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hsun Lin, Yu-Hsiang Ho, Jhun Hua Chen, Chi-Hung Liao, Teng Kuei Chuang
  • METHOD AND APPARATUS FOR IMPROVING CRITICAL DIMENSION VARIATION
    Publication number: 20220283508
    Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.
    Type: Application
    Filed: July 20, 2021
    Publication date: September 8, 2022
    Inventors: Ming-Hsun LIN, Yu-Hsiang HO, Jhun Hua CHEN, Chi-Hung LIAO, Teng Kuei CHUANG
  • Photoresist composition to reduce photoresist pattern collapse
    Patent number: 9698014
    Abstract: A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: July 4, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Tsung-Pao Chen, Sheng-Min Chuang, Teng-Kuei Chuang
  • Method and tool of lithography
    Patent number: 9651870
    Abstract: A tool and a method of lithography are provided. In various embodiments, the method of lithography includes forming a photoresist layer on a substrate. The method further includes exposing the photoresist layer to form an exposed photoresist layer. The method further includes rinsing the exposed photoresist layer. The method further includes treating the exposed photoresist layer with a chemical modifier to form a modified photoresist layer. The method further includes baking the modified photoresist layer. The method further includes developing the modified photoresist layer.
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: May 16, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Pao Chen, Sheng-Min Chuang, Teng-Kuei Chuang
  • PHOTORESIST COMPOSITION TO REDUCE PHOTORESIST PATTERN COLLAPSE
    Publication number: 20160033863
    Abstract: A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.
    Type: Application
    Filed: July 30, 2014
    Publication date: February 4, 2016
    Inventors: Tsung-Pao CHEN, Sheng-Min CHUANG, Teng-Kuei CHUANG
  • METHOD AND TOOL OF LITHOGRAPHY
    Publication number: 20150309414
    Abstract: A tool and a method of lithography are provided. In various embodiments, the method of lithography includes forming a photoresist layer on a substrate. The method further includes exposing the photoresist layer to form an exposed photoresist layer. The method further includes rinsing the exposed photoresist layer. The method further includes treating the exposed photoresist layer with a chemical modifier to form a modified photoresist layer. The method further includes baking the modified photoresist layer. The method further includes developing the modified photoresist layer.
    Type: Application
    Filed: April 28, 2014
    Publication date: October 29, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Pao CHEN, Sheng-Min CHUANG, Teng-Kuei CHUANG