Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: The present disclosure describes, in part, an enzyme-mediated radical initiating system and methods of using the system to produce polymers, including polymeric hydrogels, at ambient conditions.

Abstract: Embodiments of this application disclose a data processing method, and relate to the field of artificial intelligence. The method is applied to distributed parallel model training, for example, distributed training of a text translation model, a speech recognition model, a facial recognition model, a three-dimensional reconstruction model, and a virtual reality model. The method can implement hybrid parallelism in a distributed cluster. The method includes: inserting, based on tensor layouts of tensors of at least one operator in a deep neural network model, a redistribution operator between operators that have an input-output dependency relationship, to implement conversion between different tensor layouts; inserting the redistribution operator into a sliced computational graph; and determining an updated sliced computational graph to implement parallel model training of the deep neural network.

Abstract: A memory device and a data reading method are provided. A dummy circuit performs a read operation in synchronism with a data access circuit according to an address signal, so as to estimate time points at which the data access circuit completes each of operating procedures, and enable the data access circuit to execute a next operating procedure when completing an operating procedure.

Abstract: Any number of Serial Peripheral Interface (“SPI”) flash memory die may be stacked and packaged using any desired multi-chip packaging technique to realize any one or combination of various capabilities such as low per-bit cost, high density storage, code shadowing to RAM, and fast random access for “execute in place” applications, while preserving the advantages of the SPI interface. During device manufacture, each of the stacked die is assigned a unique identifier or “Die ID” relative to the other stacked die in the package. During normal operations, the unique Die IDs are used by a Die Select instruction to enable one of the stacked die to respond to subsequent instructions on the SPI interface, while disabling the other stacked die in the package from responding to subsequent instructions but for certain “Universal” instructions which include the Die Select instruction. Concurrent operations by the stacked die are supported.

Abstract: Any number of Serial Peripheral Interface (“SPI”) flash memory die may be stacked and packaged using any desired multi-chip packaging technique to realize any one or combination of various capabilities such as low per-bit cost, high density storage, code shadowing to RAM, and fast random access for “execute in place” applications, while preserving the advantages of the SPI interface. During device manufacture, each of the stacked die is assigned a unique identifier or “Die ID” relative to the other stacked die in the package. During normal operations, the unique Die IDs are used by a Die Select instruction to enable one of the stacked die to respond to subsequent instructions on the SPI interface, while disabling the other stacked die in the package from responding to subsequent instructions but for certain “Universal” instructions which include the Die Select instruction. Concurrent operations by the stacked die are supported.

Abstract: A method includes steps of: providing a first memory cell array including a plurality of first word lines, wherein a plurality of first data are stored in the first memory cell array; providing a second memory cell array including a plurality of second word lines, wherein the second memory cell array is separated from the first memory cell array, and a plurality of second data are stored in the second memory cell array; selecting one of the first word lines and one of the second word lines at a same time or an overlapping time; alternately selecting a first address of the first memory cell array and a second address of the second memory cell array to alternately read a first corresponding portion of the first data and a second corresponding portion of the second data from the first memory cell array and the second memory cell array.

Abstract: A method of erasing a target erase area of a non-volatile memory is provided, wherein the non-volatile memory is divided into an target erase area and an unselected area, and the method includes the steps in an erase cycle of: conditioning the target erase area of the non-volatile memory, wherein the unselected area is an area, excluding the target erase area, in the non-volatile memory; erasing target cells of the target erase area, wherein the threshold of the target cells is not greater than an erase verify voltage; soft-programming the target cells, wherein the threshold of the target cells is not less than a soft program verify voltage, wherein the soft program verify voltage is less than the erase verify voltage; and refreshing a predefined portion of the unselected area, wherein the predefined portion in the erase cycle is less than the unselected area.

Abstract: A method includes steps of: providing a first memory cell array including a plurality of first word lines, wherein a plurality of first data are stored in the first memory cell array; providing a second memory cell array including a plurality of second word lines, wherein the second memory cell array is separated from the first memory cell array, and a plurality of second data are stored in the second memory cell array; selecting one of the first word lines and one of the second word lines at a same time or an overlapping time; alternately selecting a first address of the first memory cell array and a second address of the second memory cell array to alternately read a first corresponding portion of the first data and a second corresponding portion of the second data from the first memory cell array and the second memory cell array.

Abstract: A data storage device having a non-volatile memory and a controller and a control method for the non-volatile memory are disclosed. The non-volatile memory has a plurality of blocks for data storage and each block provides a plurality of sectors. The controller allocates erase marker bits in each of the sectors to record the progress of an erase operation performed on the non-volatile memory for resumption of the erase operation when required.

Abstract: A data storage device having a non-volatile memory and a controller and a control method for the non-volatile memory are disclosed. The non-volatile memory has a plurality of blocks for data storage and each block provides a plurality of sectors. The controller allocates erase marker bits in each of the sectors to record the progress of an erase operation performed on the non-volatile memory for resumption of the erase operation when required.

Abstract: The timing of logic read operations in a Flash memory device may be improved by a pad serial output circuit which receives a pre-decoded instruction signal and pre-fetched logic data prior to the last command clock, and which performs a fast resolution of the command in the pad serial output circuit on the last clock of the command input sequence. In one illustratively implementation, instruction pre-decode and data pre-fetch may be done on the seventh clock during command input. In another illustrative implementation, a first instruction pre-decode and data pre-fetch may be done on the fourth clock during command input, and a second instruction pre-decode may be done on the seventh clock during command input. Both serial protocol interface, including dual and quad I/O SPI, and quad peripheral interface are supported.

Abstract: The timing of logic read operations in a Flash memory device may be improved by a pad serial output circuit which receives a pre-decoded instruction signal and pre-fetched logic data prior to the last command clock, and which performs a fast resolution of the command in the pad serial output circuit on the last clock of the command input sequence. In one illustratively implementation, instruction pre-decode and data pre-fetch may be done on the seventh clock during command input. In another illustrative implementation, a first instruction pre-decode and data pre-fetch may be done on the fourth clock during command input, and a second instruction pre-decode may be done on the seventh clock during command input. Both serial protocol interface, including dual and quad I/O SPI, and quad peripheral interface are supported.

Abstract: A power storage device is provided with an upper cover, a cell module and a lower cover. A tab joint portion is locally formed at each of two sides of the cell module to be welded and assembled with a tab. When welded with the tab joint portion, the tab merely needs to be placed horizontally or be slightly at an inclination angle, and one-time bending is performed on an electrical connection part on the tab, so as to be electrically connected to an electrode of the upper cover. Therefore, the situation that a plasticized metal protective film wrapped on the outer edge of the tab or the cell module is easy to crack caused of many times of bending in the prior art can be improved.

Abstract: A method and circuit for accessing data bits in a memory array in a multi-data rate operation. In one architecture, a memory device includes a memory array for storing data values, multiple (N) sensing circuits, multiple (K) control lines, and an I/O pad. One sensing circuit couples to each data value being retrieved from the memory device. The I/O pad operatively couples to the sensing circuits. And each control line couples to at least one sensing circuit and has a clock phase unique from remaining control lines.

Abstract: Methods and circuits for triggering column select line for write operations in a multiple data rate (e.g., a double data rate) operation. A memory device includes a memory array that stores data values, an address logic circuit that generates an address for the memory array, and a column decoder. The column decoder couples to the address logic circuit and the memory array. The column decoder receives either a data strobe input signal (DQS) or a clock signal (CLK), or both, and activates a column select line for the memory array in response to one of the input signal(s).