Abstract: The invention provides a method for forming a deep trench in a substrate. A sacrificial layer and a liner layer are first used to define the deep trench pattern. The sacrificial layer is then replaced with a silicon glass layer. A thick mask layer includes the silicon glass layer, the liner layer and a silicon nitride layer is formed on the substrate. Through an opening of the thick mask layer, a deep trench is etched into the substrate.

Abstract: The invention provides a method for forming a deep trench in a substrate. A sacrificial layer and a liner layer are first used to define the deep trench pattern. The sacrificial layer is then replaced with a silicon glass layer. A thick mask layer includes the silicon glass layer, the liner layer and a silicon nitride layer is formed on the substrate. Through an opening of the thick mask layer, a deep trench is etched into the substrate.

Abstract: A DRAM stack capacitor and a fabrication method thereof has a first capacitor electrode formed of a conductive carbon layer overlying a semiconductor substrate, a capacitor dielectric layer and a second capacitor electrode. The first capacitor electrode is of crown shape geometry and possesses an inner surface and an outer surface. The DRAM stack capacitor features the outer surface of the first capacitor electrode as an uneven surface.

Abstract: A method for etching Si anisotropically uses a solution containing NH4F and HF.

Abstract: The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a trench and a pad stack layer formed thereon is provided. A masking layer is then formed in the lower portion of the trench. Plasma nitridation is then performed to form a nitride layer covering the sidewalls of the trench, followed by removing the masking layer to expose the sidewalls of the trench. The lower portion of the trench is then expanded by etching to form a bottle-shaped trench.

Abstract: The invention relates to a process for etching at least one substrate, in particular at least one silicon wafer for the fabrication of DRAM memory chips. The process comprising at least one substrate, for a first etching step, is arranged for a predetermined time in a first vessel containing a first etchant, then at least one substrate, for a first rinsing step, is arranged for a predetermined time in a second vessel containing a first rinsing agent, the first rinsing agent containing at least one wetting agent, and then at least one substrate, for a second etching step, is arranged for a predetermined time in a third vessel containing a second etchant.

Abstract: A method for producing a liner mask on a semiconductor structure is disclosed. The method may include providing an amorphous liner layer (55) on the top side (OS;OS?) of the semiconductor structure, annealing the amorphous liner layer (55) to increase the crystallisation and generate a semi-crystalline liner layer (55); implanting (I1) extrinsic ions in a subregion (55a) of the semi-crystalline liner layer (55) to decrease the etching rate of the subregion (55a) and create an etch selectivity between the to the subregion (55a) complementary subregion (55b) and the subregion (55a) in the predetermined etchant; and selectively removing of the to the subregion (55a) complementary subregion (55b) opposite to the subregion (55a) in a etching step in the predetermined etchant for completing the liner mask.

Abstract: A method for etching Si anisotropically uses a solution containing NH4F and HF.

Abstract: The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a trench and a pad stack layer formed thereon is provided. A masking layer is then formed in the lower portion of the trench. Plasma nitridation is then performed to form a nitride layer covering the sidewalls of the trench, followed by removing the masking layer to expose the sidewalls of the trench. The lower portion of the trench is then expanded by etching to form a bottle-shaped trench.