Abstract: A recycle apparatus includes a conveyor, a flattening device, and a cutting tool. The conveyor includes a first roller and a second roller opposite to each other. The flattening device is located aside the first roller and the second roller. The cutting tool is located aside the flattening device. The flattening device is located between the first roller and the second roller of the conveyor and the cutting tool. The first roller and the second roller is configured to press and feed the photovoltaic module to the flattening device for allowing the photovoltaic module to be flattened by the flattening device, and then the flattened photovoltaic module is fed to the cutting tool by the first roller and the second roller for allowing the back sheet to be separated from the glass sheet assembly by the cutting tool.

Abstract: The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

Abstract: The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

Abstract: The disclosure provides a recycle apparatus. The recycle apparatus is configured to separate a back sheet and a glass sheet assembly of a photovoltaic module. The recycle apparatus includes a conveyor, a flattening device, and a cutting tool. The conveyor includes a first roller and a second roller opposite to each other. The flattening device is located aside the first roller and the second roller. The cutting tool is located aside the flattening device. The flattening device is located between the first roller and the second roller of the conveyor and the cutting tool. The first roller and the second roller is configured to clamp the photovoltaic module and to feed the photovoltaic module to the flattening device configured to flatten the photovoltaic module and to the cutting tool configured to separate the back sheet from the glass sheet assembly.

Abstract: An apparatus for electrochemical etching and an apparatus for electroplating are provided, wherein the apparatus for electrochemical etching includes an etching solution spraying head, a support, and a first and a second electrode. The first electrode is disposed inside the etching solution spraying head, and current is provided to an etching solution inside the etching solution spraying head by the first electrode. The support is disposed opposite to the etching solution spraying head. The second electrode is disposed on the support. When a substrate is placed on the second electrode, a first surface of the substrate is in electrical contact with the second electrode, and the etching solution sprayed from the etching solution spraying head can naturally flow through a second surface of the substrate and then flow off from the edges of the support.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: In slicing a crystal bar into silicon wafers, an average about 40% of silicon would be loss due to the widths of slicing wires themselves. The fact that the silicon slurry is discarded as sludge or discarded after recovering silicon carbide particles causes a large waste of cost. If the silicon slurry (40% of silicon) could be recovered as the raw material for growing silicon crystal bars, the production cost would be lowered. The recovery method of silicon slurry according to the present invention could effectively obtain silicon raw material after removing impurities, which could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost.

Abstract: In slicing a crystal bar into silicon wafers, an average about 40% of silicon would be loss due to the widths of slicing wires themselves. The fact that the silicon slurry is discarded as sludge or discarded after recovering silicon carbide particles causes a large waste of cost. If the silicon slurry (40% of silicon) could be recovered as the raw material for growing silicon crystal bars, the production cost would be lowered. The recovery method of silicon slurry according to the present invention could effectively obtain silicon raw material after removing impurities, which could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost.

Abstract: In slicing a crystal bar into silicon wafers, an average of about 40% of silicon would be loss due to the widths of slicing wire saws themselves. The fact that the silicon slurry is discarded or discarded after recovering silicon carbide particles causes a large waste of cost. According to the present invention, the silicon slurry undergoes an acid washing step and a high temperature separation step, wherein the heating temperature is between the melting points of silicon and silicon carbide, and the silicon slurry is resident for an appropriate time, such that the silicon and silicon carbide would be separated to obtain silicon. The present invention could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost.