Patents by Inventor Tengzhi Yang

Tengzhi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10756256
    Abstract: A magnetoresistive random access memory and a method for manufacturing the same are provided, with which a stress layer covers a part of the protective layer along a direction of a current in the spin-orbit coupling layer, so that a stress is generated on the part of the magnetic layer locally due to the stress layer, thus a lateral asymmetric structure is formed in a direction perpendicular to the current source. In a case that a current is supplied to the spin-orbit coupling layer, the spin-orbit coupling effect in the magnetic layer is asymmetric due to the stress on the part of the magnetic layer, thereby realizing a deterministic switching of the magnetic moment under the function of the stress.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: August 25, 2020
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Meiyin Yang, Jun Luo, Tengzhi Yang, Jing Xu
  • Publication number: 20200212293
    Abstract: A magnetoresistive random access memory and a method for manufacturing the same are provided, with which a stress layer covers a part of the protective layer along a direction of a current in the spin-orbit coupling layer, so that a stress is generated on the part of the magnetic layer locally due to the stress layer, thus a lateral asymmetric structure is formed in a direction perpendicular to the current source. In a case that a current is supplied to the spin-orbit coupling layer, the spin-orbit coupling effect in the magnetic layer is asymmetric due to the stress on the part of the magnetic layer, thereby realizing a deterministic switching of the magnetic moment under the function of the stress.
    Type: Application
    Filed: May 14, 2019
    Publication date: July 2, 2020
    Inventors: Meiyin YANG, Jun LUO, Tengzhi YANG, Jing XU
  • Publication number: 20200212103
    Abstract: A spin-orbit torque magnetoresistive random access memory, and a method for manufacturing a spin-orbit torque magnetoresistive random access memory are provided. The spin-orbit torque magnetoresistive random access memory includes a spin-orbit coupling layer and a magnetoresistive tunnel junction located on the spin-orbit coupling layer. The magnetoresistive tunnel junction includes a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy. In a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.
    Type: Application
    Filed: May 14, 2019
    Publication date: July 2, 2020
    Inventors: Meiyin YANG, Jun LUO, Tengzhi YANG, Jing XU
  • Patent number: 10700124
    Abstract: A spin-orbit torque magnetoresistive random access memory, and a method for manufacturing a spin-orbit torque magnetoresistive random access memory are provided. The spin-orbit torque magnetoresistive random access memory includes a spin-orbit coupling layer and a magnetoresistive tunnel junction located on the spin-orbit coupling layer. The magnetoresistive tunnel junction includes a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy. In a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: June 30, 2020
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Meiyin Yang, Jun Luo, Tengzhi Yang, Jing Xu