Patents by Inventor Teo Siew Lang

Teo Siew Lang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a light emitting diode structure and a light diode structure
    Patent number: 10186635
    Abstract: A method of forming a vertical III-nitride based light emitting diode structure 5 and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-oninsulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based 10 substrate of the light emitting structure.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: January 22, 2019
    Assignee: AGENCY FOR SCIENCE TECHNOLOGY AND RESEARCH
    Inventors: Tripathy Sudhiranjan, Lin Vivian Kaixin, Teo Siew Lang, Dolmanan Surani Bin
  • METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE AND A LIGHT DIODE STRUCTURE
    Publication number: 20160149084
    Abstract: A method of forming a vertical III-nitride based light emitting diode structure 5 and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-oninsulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based 10 substrate of the light emitting structure.
    Type: Application
    Filed: October 20, 2015
    Publication date: May 26, 2016
    Inventors: Tripathy SUDHIRANJAN, Lin VIVIAN KAIXIN, Teo SIEW LANG, Dolmanan SURANI BIN
  • Method of forming a light emitting diode structure and a light diode structure
    Patent number: 9190560
    Abstract: A method of forming a vertical III-nitride based light emitting diode structure and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: November 17, 2015
    Assignee: Agency for Science Technology and Research
    Inventors: Tripathy Sudhiranjan, Lin Vivian Kaixin, Teo Siew Lang, Dolmanan Surani Bin
  • METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE AND A LIGHT DIODE STRUCTURE
    Publication number: 20130193466
    Abstract: A method of forming a vertical III-nitride based light emitting diode structure and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-on-insulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based substrate of the light emitting structure.
    Type: Application
    Filed: May 18, 2010
    Publication date: August 1, 2013
    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
    Inventors: Tripathy Sudhiranjan, Lin Vivian Kaixin, Teo Siew Lang, Dolmanan Surani Bin