Patents by Inventor Teo Tian Hwee

Teo Tian Hwee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6566961
    Abstract: A wide-band single-ended to differential converter (DC to 1 GHz) with very low amplitude and phase matching errors, of the order of 0.01 dB and 0.15 degrees respectively and using CMOS technology, is comprised of a first and a second stage. The very low amplitude and phase matching errors have been achieved firstly by the use of capacitive means CD across the gate and source of the first stage MOS transistor M1 with a value equal to the drain to ground (reference potential) parasitic capacitance of the tail current source device for the first stage, and secondly by using equal valued capacitive means CF1, CF2 in the second stage and setting their values to be several (5-10) times more than the gate-drain parasitic capacitances of either of the differential transistors of the second stage.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: May 20, 2003
    Assignees: Institute of Microelectronics, Oki Techno Centre (Singapore) Pte. Ltd.
    Inventors: Uday Dasgupta, Teo Tian Hwee
  • Publication number: 20020175763
    Abstract: A wide-band single-ended to differential converter (DC to 1 GHz) with very low amplitude and phase matching errors, of the order of 0.01 dB and 0.15 degrees respectively and using CMOS technology, is comprised of a first and a second stage. The very low amplitude and phase matching errors have been achieved firstly by the use of capacitive means CD across the gate and source of the first stage MOS transistor M1 with a value equal to the drain to ground (reference potential) parasitic capacitance of the tail current source device for the first stage, and secondly by using equal valued capacitive means CF1, CF2 in the second stage and setting their values to be several (5-10) times more than the gate-drain parasitic capacitances of either of the differential transistors of the second stage.
    Type: Application
    Filed: March 30, 2001
    Publication date: November 28, 2002
    Applicant: INSTITUTE OF MICROELECTRONICS AND OKI TECHNO CENTRE (SINGAPORE) PTE. LTD.
    Inventors: Uday Dasgupta, Teo Tian Hwee