Patents by Inventor Teodor Krassimirov Todorov

Teodor Krassimirov Todorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020780
    Abstract: A neuromorphic device includes a metal-oxide channel layer that has a variable-resistance between a first terminal and a second terminal. The neuromorphic device further includes a metal-oxide charge transfer layer over the metal-oxide channel layer that causes the metal-oxide channel layer to vary in resistance based on charge exchange between the metal-oxide charge transfer layer and the metal-oxide channel layer in accordance with an applied input signal. The neuromorphic device further includes a third terminal that applies the signal to the metal-oxide charge transfer layer and the metal-oxide channel layer.
    Type: Application
    Filed: July 17, 2019
    Publication date: January 21, 2021
    Inventors: JOHN ROZEN, TAKASHI ANDO, TEODOR KRASSIMIROV TODOROV, JIANSHI TANG
  • Publication number: 20200395628
    Abstract: According to an embodiment of the present invention there is a cathode of an energy storage device. The cathode is made of Lithium Manganese Oxyfluoride (LMOF), with the approximate stoichiometry of Li2MnO2F. In some embodiments, the cathode is made of Lithium Manganese Oxyfluoride (LMOF), Li2MnO2F combined with a solid polymer electrolyte (SPE). Other materials such as conductive material and binders can be included in the cathode. Methods of making are disclosed. According to an embodiment of the present invention there is a composition of matter. The composition is made of Lithium Manganese Oxyfluoride (LMOF), with the approximate stoichiometry of Li2MnO2F combined with a solid polymer electrolyte (SPE). Other materials such as conductive material and binders can be included in the cathode. Methods of making are disclosed. The composition can be used as a cathode in an energy storage device. An energy storage device, e.g. a battery, is disclosed.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 17, 2020
    Inventors: John Collins, Bucknell C. Webb, Paul S. Andry, Teodor Krassimirov Todorov, Devendra K. Sadana
  • Publication number: 20200387779
    Abstract: A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Teodor Krassimirov Todorov, JIANSHI TANG, Douglas M. Bishop, John Rozen, Takashi Ando
  • Publication number: 20200335826
    Abstract: Making a rechargeable Lithium energy storage device begins by forming one or more trenches in a solid silicon substrate. One or more region interface precursors are deposited in the trench followed by one or more anode materials, one or more solid polymer electrolytes (SPE), and one or more cathode materials. Electrically cycling transforms the battery structures prior to full operation of the battery. Some, or all, of the process steps can be performed while the materials are within the trench, i.e. in-situ.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Inventors: John Collins, Ali Afzali-Ardakani, Devendra K. Sadana, Teodor Krassimirov Todorov
  • Patent number: 10109755
    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; and ?1?q?1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: October 23, 2018
    Assignee: International Business Machines Corporation
    Inventors: Santanu Bag, David Aaron Randolph Barkhouse, David Brian Mitzi, Teodor Krassimirov Todorov
  • Publication number: 20160276505
    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; and ?1?q?1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
    Type: Application
    Filed: May 26, 2016
    Publication date: September 22, 2016
    Inventors: Santanu Bag, David Aaron Randolph Barkhouse, David Brian Mitzi, Teodor Krassimirov Todorov
  • Patent number: 9368660
    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; and ?1?q?1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: June 14, 2016
    Assignee: International Business Machines Corporation
    Inventors: Santanu Bag, David Aaron Randolph Barkhouse, David Brian Mitzi, Teodor Krassimirov Todorov
  • Patent number: 8642884
    Abstract: Low-temperature sulfurization/selenization heat treatment processes for photovoltaic devices are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A substrate is provided that is either (i) formed from an electrically conductive material or (ii) coated with at least one layer of a conductive material. A chalcogenide absorber layer is formed on the substrate. A buffer layer is formed on the absorber layer. A transparent front contact is formed on the buffer layer. The device is contacted with a chalcogen-containing vapor having a sulfur and/or selenium compound under conditions sufficient to improve device performance by filling chalcogen vacancies within the absorber layer or the buffer layer or by passivating one or more of grain boundaries in the absorber layer, an interface between the absorber layer and the buffer layer and an interface between the absorber layer and the substrate.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: February 4, 2014
    Assignee: International Business Machines Corporation
    Inventors: David Brian Mitzi, Teodor Krassimirov Todorov
  • Publication number: 20130061903
    Abstract: Low-temperature sulfurization/selenization heat treatment processes for photovoltaic devices are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A substrate is provided that is either (i) formed from an electrically conductive material or (ii) coated with at least one layer of a conductive material. A chalcogenide absorber layer is formed on the substrate. A buffer layer is formed on the absorber layer. A transparent front contact is formed on the buffer layer. The device is contacted with a chalcogen-containing vapor having a sulfur and/or selenium compound under conditions sufficient to improve device performance by filling chalcogen vacancies within the absorber layer or the buffer layer or by passivating one or more of grain boundaries in the absorber layer, an interface between the absorber layer and the buffer layer and an interface between the absorber layer and the substrate.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 14, 2013
    Applicant: International Business Machines Corporation
    Inventors: David Brian Mitzi, Teodor Krassimirov Todorov
  • Publication number: 20130037110
    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of forming metal chalcogenide nanoparticles is provided. The method includes the following steps. Water, a source of Zn, a source of Cu, optionally a source of Sn and at least one of a source of S and a source of Se are contacted under conditions sufficient to produce a dispersion of the metal chalcogenide nanoparticles having a Zn chalcogenide distributed within a surface layer thereof. The metal chalcogenide nanoparticles are separated from the dispersion and can subsequently be used to form an ink for deposition of kesterite films.
    Type: Application
    Filed: August 10, 2011
    Publication date: February 14, 2013
    Applicant: International Business Machines Corporation
    Inventors: David Brian Mitzi, Teodor Krassimirov Todorov
  • Publication number: 20130037090
    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; and ?1?q?1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
    Type: Application
    Filed: August 10, 2011
    Publication date: February 14, 2013
    Applicant: International Business Machines Corporation
    Inventors: Santanu Bag, David Aaron Randolph Barkhouse, David Brian Mitzi, Teodor Krassimirov Todorov