Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: The invention relates to a transport container (1) for helium (He), comprising an inner container (6) for receiving the helium (He); a coolant container (14) for receiving a cryogenic fluid (N2); an outer container (2) in which the inner container (6) and the coolant container (14) are received; a thermal shield (21) in which the inner container (6) is received and which can be actively cooled using the cryogenic fluid (N2), said thermal shield (21) having at least one cooling line (26) which is fluidically connected to the coolant container (14) and in which the cryogenic fluid (N2) can be received in order to actively cool the thermal shield (21); and at least one return line (34, 35), by means of which the at least one cooling line (26) is fluidically connected to the coolant container (14) in order to return the cryogenic fluid (N2) back to the coolant container (14).

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Abstract: The invention relates to a transport container (1) for helium (He), comprising an inner container (6) for receiving the helium (He); a coolant container (14) for receiving a cryogenic fluid (N2); an outer container (2) in which the inner container (6) and the coolant container (14) are received; a thermal shield (21) in which the inner container (6) is received and which can be actively cooled using the cryogenic fluid (N2), said thermal shield (21) having at least one cooling line (26) which is fluidically connected to the coolant container (14) and in which the cryogenic fluid (N2) can be received in order to actively cool the thermal shield (21); and at least one return line (34, 35), by means of which the at least one cooling line (26) is fluidically connected to the coolant container (14) in order to return the cryogenic fluid (N2) back to the coolant container (14).

Abstract: A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm2. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.