Abstract: A substrate treatment method for treating a substrate, includes: (a) applying a coating solution to a front surface of the substrate by a spin coating method to form a coating film; (b) supplying a solvent for the coating solution to a projection of the coating film formed at a front surface peripheral edge of the substrate at (a); and (c) rotating the substrate in a state where the supply of the solvent is stopped, to move a top of the projection to an outside in a radial direction of the substrate. (b) and (c) are repeatedly performed. The projection is a buildup of the coating solution protruding from the coating film.

Abstract: An electronic device including: a light guide plate; an imaging unit disposed so as to face the light guide plate and including an image sensor; a plurality of light emitting elements disposed around the imaging unit; and a refractive part interposed at least between the light emitting element and the light guide plate and refracting light emitted from the light emitting element.

Abstract: A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.

Abstract: [Object] A film is deposited on a substrate with high productivity and more uniform film thickness distribution. [Solving Means] In a deposition apparatus, a substrate holder supports at least one substrate facing a first target, rotates around a first central axis, and is configured such that the substrate is rotatable around a second central axis deviated from the first central axis. A vacuum chamber houses the first target and the substrate holder. A power source supplies discharge power to the first target. A gas supply mechanism supplies a discharge gas to the vacuum chamber.

Abstract: A head-mounted display (10) according to the present disclosure, includes: a front block (100) that supports a display unit to be disposed in front of an eye of a user; a rear block (300) that is to be disposed on a back side of a head of the user; and a plurality of elastic bodies (230, 340) that extend along a belt for linking the front block (100) to the rear block (300). Each of the plurality of elastic bodies (230, 240) has one end fixed to the belt and another end fixed to a predetermined position in the rear block (300).

Abstract: A method of forming a film of this invention includes: rotating, inside a vacuum chamber, a to-be-processed substrate with a center of the to-be-processed substrate, while revolving the to-be-processed substrate on the same plane about a revolution shaft; and feeding a film-forming material from a film-forming source to form a predetermined thin film on a surface of the to-be-processed substrate.

Abstract: There is provided a substrate processing apparatus which includes: a rotation holding part configured to hold a substrate and rotate the substrate at a predetermined rotation speed around a rotation axis which extends in a direction perpendicular to a front surface of the substrate; a processing liquid supply part provided with a processing liquid nozzle located in proximity of the front surface and configured to supply a processing liquid onto the front surface from the processing liquid nozzle; a solvent supply part provided with at least one discharge nozzle located in proximity of the front surface and configured to supply an organic solvent onto the front surface from the at least one discharge nozzle; and a controller configured to execute a first process and a second process.

Abstract: A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.

Abstract: A coating sequence includes supplying a resist liquid onto a wafer under a condition that a liquid puddle of the resist liquid is formed at a central portion thereof; supplying, while rotating the wafer at a first rotation speed where the liquid puddle stays at an inner side than an edge of the wafer, a diluting liquid and moving a supply position of the diluting liquid from an outside of the liquid puddle to an edge portion thereof; moving, after the moving of the supply position from the outside to the edge portion, the supply position from the edge portion to the outside while continuously rotating the wafer at the first rotation speed; and rotating, after the moving of the supply position from the edge portion to the outside, the wafer at a rotation speed higher than the first rotation speed to diffuse the resist liquid toward the edge.

Abstract: A substrate treatment method for treating a substrate, includes: (a) applying a coating solution to a front surface of the substrate by a spin coating method to form a coating film; (b) supplying a solvent for the coating solution to a projection of the coating film formed at a front surface peripheral edge of the substrate at (a); and (c) rotating the substrate in a state where the supply of the solvent is stopped, to move a top of the projection to an outside in a radial direction of the substrate, (b) and (c) being repeatedly performed.

Abstract: There is provided a substrate processing apparatus which includes: a rotation holding part configured to hold a substrate and rotate the substrate at a predetermined rotation speed around a rotation axis which extends in a direction perpendicular to a front surface of the substrate; a processing liquid supply part provided with a processing liquid nozzle located in proximity of the front surface and configured to supply a processing liquid onto the front surface from the processing liquid nozzle; a solvent supply part provided with at least one discharge nozzle located in proximity of the front surface and configured to supply an organic solvent onto the front surface from the at least one discharge nozzle; and a controller configured to execute a first process and a second process.

Abstract: A coating sequence includes supplying a resist liquid onto a wafer under a condition that a liquid puddle of the resist liquid is formed at a central portion thereof; supplying, while rotating the wafer at a first rotation speed where the liquid puddle stays at an inner side than an edge of the wafer, a diluting liquid and moving a supply position of the diluting liquid from an outside of the liquid puddle to an edge portion thereof; moving, after the moving of the supply position from the outside to the edge portion, the supply position from the edge portion to the outside while continuously rotating the wafer at the first rotation speed; and rotating, after the moving of the supply position from the edge portion to the outside, the wafer at a rotation speed higher than the first rotation speed to diffuse the resist liquid toward the edge.

Abstract: Disclosed are carbon particles for a negative electrode of a lithium ion secondary battery, the carbon particles having a pore volume of pores having a size of 2×10 to 2×104 ?, of 0.1 ml/g or less with respect to the mass of the carbon particles; having an interlayer distance d(002) of a graphite crystal as determined by an X-ray diffraction analysis, of 3.38 ? or less; having a crystallite size Lc in the C-axis direction of 500 ? or more; and having a degree of circularity of the particle cross-section in the range of 0.6 to 0.9. Therefore, the carbon particles for the negative electrode of the lithium ion secondary battery enables to have high capacity and have superior rapid charge characteristics, a negative electrode for a lithium ion secondary battery using the carbon particles, and a lithium ion secondary battery can be provided.

Abstract: Disclosed are carbon particles for a negative electrode of a lithium ion secondary battery, the carbon particles having a pore volume of pores having a size of 2×10 to 2×104 ?, of 0.1 ml/g or less with respect to the mass of the carbon particles; having an interlayer distance d(002) of a graphite crystal as determined by an X-ray diffraction analysis, of 3.38 ? or less; having a crystallite size Lc in the C-axis direction of 500 ? or more; and having a degree of circularity of the particle cross-section in the range of 0.6 to 0.9. Therefore, the carbon particles for the negative electrode of the lithium ion secondary battery enables to have high capacity and have superior rapid charge characteristics, a negative electrode for a lithium ion secondary battery using the carbon particles, and a lithium ion secondary battery can be provided.