Abstract: A semiconductor device according to an embodiment includes a transistor, and a plurality of metal layers that is respectively arranged in a plurality of layers stacked above the transistor, in which the plurality of metal layers includes a first metal layer that is arranged in a lowermost layer of the plurality of layers, a second metal layer that is arranged in an uppermost layer of the plurality of layers and that is thicker than the first metal layer, and a third metal layer that is arranged in the uppermost layer and that is thicker than the second metal layer.

Abstract: According to an embodiment, a semiconductor device includes a first wiring member, an opening portion and an electrode terminal portion. The first wiring member is provided on a first interlayer insulating film on a semiconductor substrate and used as a wiring layer. The opening portion is provided in a second interlayer insulating film on the first wiring member. The electrode terminal portion is provided on the opening portion and the second interlayer insulating film around the opening portion. In the electrode terminal portion, a barrier metal film in contact with the first wiring member, a seed metal film and a second wiring member are stacked and thus formed in such a manner as to cover the opening portion, and a coating metal film is formed on an upper portion and a side surface of the second wiring member.