Patents by Inventor Teppei Watanabe

Teppei Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing ferritic stainless steel product
    Patent number: 9738963
    Abstract: In a method for manufacturing a ferritic stainless steel product, a ferritic stainless steel object is heated in an inert gas atmosphere including nitrogen gas in a heating furnace at a nitriding temperature higher than or equal to a transformation temperature so as to form a nitrided layer on a surface of the ferritic stainless steel object. Moreover, the nitriding temperature is set lower than 1100° C. during the heating. The heating of the ferritic stainless steel object is performed in a state where a solid carbon exists inside the heating furnace.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: August 22, 2017
    Assignee: DENSO CORPORATION
    Inventors: Teppei Watanabe, Atsushi Iwase
  • METHOD FOR MANUFACTURING FERRITIC STAINLESS STEEL PRODUCT
    Publication number: 20140283955
    Abstract: In a method for manufacturing a ferritic stainless steel product, a ferritic stainless steel object is heated in an inert gas atmosphere including nitrogen gas in a heating furnace at a nitriding temperature higher than or equal to a transformation temperature so as to form a nitrided layer on a surface of the ferritic stainless steel object. Moreover, the nitriding temperature is set lower than 1100° C. during the heating. The heating of the ferritic stainless steel object is performed in a state where a solid carbon exists inside the heating furnace.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 25, 2014
    Applicant: Denso Corporation
    Inventors: Teppei Watanabe, Atsushi Iwase
  • Semiconductor device having an undercoat layer and method of manufacturing the same
    Patent number: 7550782
    Abstract: In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: June 23, 2009
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Masanori Murakami, Teppei Watanabe, Susumu Tsukimoto, Kazuhiro Ito, Jun Ito, Miki Moriyama, Naoki Shibata
  • Semiconductor device and method of manufacturing the same
    Publication number: 20060065898
    Abstract: In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
    Type: Application
    Filed: September 23, 2005
    Publication date: March 30, 2006
    Applicant: Toyoda Gosei Co., Ltd.
    Inventors: Masanori Murakami, Teppei Watanabe, Susumu Tsukimoto, Kazuhiro Ito, Jun Ito, Miki Moriyama, Naoki Shibata