Abstract: A photonic integrated chip is configured as a transmitter-receiver chip. The photonic integrated chip includes a light emitter, a light detector, a multi-mode interference coupler, and a mode-filed adapter. The light emitted by the light emitter is guided to a core layer formed below the multi-mode interference coupler, and further to the mode-filed adapter for transmission of light to an optical fiber coupled with the photonic integrated chip. Similarly, light received by the mode-filed adapter from the optical fiber propagates to the core layer, and is guided by the multi-mode interference coupler into the light detector. The photonic integrated chip is utilized to realize a single-unit transmitter-receiver module for a fiber optic gyroscope circuit based on monolithic integration of photonics components via wafer fabrication on a substrate. The photonic integrated chip has a low fabrication cost, low size, and is robust.

Abstract: A mode field adapter (MFA) is disclosed. The MFA is tapered and includes a passive core region and an active core region separated by a distance. Further, the passive core region includes first and second passive layers that are separated by another distance. The MFA is configured to receive an optical signal from a first waveguide, and alter, for transmission to a second waveguide, an optical mode of the optical signal. The optical mode is altered based on the distance between the first and second passive layers, the distance between the active and passive core regions, and the tapering of the MFA. The optical mode is altered such that an optical loss associated with the optical signal traversing from the first waveguide to the second waveguide by way of the MFA is within a tolerance limit.

Abstract: A photonic integrated chip is configured as a transmitter-receiver chip. The photonic integrated chip includes a light emitter, a light detector, a multi-mode interference coupler, and a mode-filed adapter. The light emitted by the light emitter is guided to a core layer formed below the multi-mode interference coupler, and further to the mode-filed adapter for transmission of light to an optical fiber coupled with the photonic integrated chip. Similarly, light received by the mode-filed adapter from the optical fiber propagates to the core layer, and is guided by the multi-mode interference coupler into the light detector. The photonic integrated chip is utilized to realize a single-unit transmitter-receiver module for a fiber optic gyroscope circuit based on monolithic integration of photonics components via wafer fabrication on a substrate. The photonic integrated chip has a low fabrication cost, low size, and is robust.

Abstract: A photonic integrated circuit (PIC) includes various mode field adapters (MFAs), a waveguide, and various contact pads. All the MFAs are on a same facet of the PIC. One MFA of the PIC outputs a first optical signal that is an amplified version of a second optical signal. The waveguide is divided into two waveguide arms and a bend portion to join the two waveguide arms. The waveguide extends between the MFAs such that the second optical signal propagates through the waveguide. Further, each waveguide arm is formed between the contact pads. The second optical signal propagating through the waveguide is amplified based on a current that is injected in the PIC by way of the contact pads.

Abstract: According to embodiments of the present invention, an optical arrangement is provided. The optical arrangement includes a support substrate; at least one optical fiber arranged on the support substrate; at least one waveguide arranged on the support substrate and adjacent to the at least one optical fiber; the at least one waveguide defining a light propagation direction; and at least one grin index lens arranged asymmetrically relative to the light propagation direction such that light is coupled from the at least one optical fiber through the at least one grin index lens to the at least one waveguide.

Abstract: A method for manufacturing a semiconductor arrangement is disclosed. The method comprises forming at least one trench in a dielectric layer, thereby exposing a portion of a semiconductor substrate, forming a silicon-germanium buffer layer at least on the bottom of the at least one trench, forming a germanium seed layer on the silicon-germanium buffer layer and forming a germanium layer on the germanium seed layer. A semiconductor arrangement is also disclosed. The semiconductor arrangement comprises a semiconductor substrate, a dielectric layer disposed above the semiconductor substrate, at least one trench in the dielectric layer exposing a portion of the semiconductor substrate, a silicon-germanium buffer layer disposed above at least the bottom of the at least one trench, a germanium seed layer disposed above the silicon-germanium buffer layer and a germanium layer disposed above the germanium seed layer.