Abstract: A wearable inspection device for inspecting an article is provided. The wearable inspection device includes a wearable portion and an eddy current probe at the wearable portion. The eddy current probe is configured to interface with the article and inspect the article. The wearable inspection device also includes an operator interface coupled with the eddy current probe. The eddy current probe can transmit data to the operator interface such that the operator interface can display data to a user. The operator interface also defines a probe status indicator configured to indicate a status of the at least one probe with respect to the article.

Abstract: Methods, systems, and computer program products sustain a fleet of configuration-controlled assets. The method involves integrating a plurality of previously separate systems with reusable business transactions associated with managing a fleet of vehicles. The method also involves receiving operational data associated with a vehicle of the fleet, integrating the operational data per customer requirements, packaging and distributing the operational data to the plurality of systems, and installing and distributing the operational data to one or more applications of the plurality of systems utilizing reusable business transactions. The system utilizes a plurality of applications and a plurality of logical subsystems, which are connected to each other through gateways. The logical subsystems use a common format defined by a set of messages. However, the applications can use a plurality of different formats.

Abstract: The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.

Abstract: The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.

Abstract: A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a relatively long gap length which is in the order of 0.5 to 10.0 mm as well as having a resistivity which is greater than 1.times.10.sup.7 ohm-cm. The device is further dc biased to a field of between 15 kV/cm and 35 kV/cm. Under such conditions, a very low dc current flows without any oscillatory behavior; however, illumination of the semiconductor body with a fast rising optical pulse having a wavelength suitable for carrier generation causes electrons to be lifted to the conduction band which is accompanied by a rapid reduction of the resistivity.

Abstract: A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.