Abstract: Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition.

Abstract: Apparatus (12, 12a) and a method for depositing a material on a substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a material are passed to provide a vapor that is deposited on a conveyed substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the material as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the deposition. In one embodiment of apparatus (12), the vapor is deposited on an upwardly facing surface (56) of the substrate, while another embodiment of the apparatus (12a) deposits the vapor on a downwardly facing surface (54) of the substrate.