Abstract: A flux enhanced data transducer and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500 .ANG. of a relatively higher magnetic moment material is added to the upper surface of the shared shield, or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer. The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1.0 k.ANG. of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.

Abstract: A flux enhanced data transducer and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500 .ANG. of a relatively higher magnetic moment material is added to the upper surface of the shared shield, or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer. The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1.0 k.ANG. of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.

Abstract: A durable quarter wave antireflection coating for a photodetecting device 20, the photodetecting device being formed within a radiation absorbing layer 22 of HgCdTe which is epitaxially grown upon a surface of a substantially transparent Group II-VI substrate 24 having an index of refraction of between approximately 2.2 and 2.8. By example, the substrate 24 may comprise CdZnTe or CdTe. The antireflection coating 26 is formed upon a radiation receiving surface of the substrate 24. The antireflection coating may comprise a layer of CeO.sub.x F.sub.(3.0-x), where x has a value within the range of approximately zero to approximately 1.0. The CeO.sub.x F.sub.(3.0-x) layer is formed by an ion beam sputter technique, the CeO.sub.x F.sub.(3-x) layer being sputtered from a source comprised of CeF.sub.3 in the presence of a predetermined pressure of oxygen.