Patents by Inventor Terence J. de Lyon
Terence J. de Lyon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11251209Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.Type: GrantFiled: March 14, 2014Date of Patent: February 15, 2022Assignee: HRL Laboratories, LLCInventors: Daniel Yap, Rajesh D. Rajavel, Sarabjit Mehta, Terence J. De Lyon, Hasan Sharifi, Pierre-Yves Delaunay
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Patent number: 11063163Abstract: An infrared detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a photo absorber layer responsive to infrared light, a first barrier layer disposed on the absorber layer, wherein the first barrier layer substantially comprises AlSb, a second barrier layer disposed on the first barrier layer, wherein the second barrier layer substantially comprises AlxGa1-xSb and a contact layer disposed on the second barrier layer.Type: GrantFiled: March 14, 2014Date of Patent: July 13, 2021Assignee: HRL Laboratories, LLCInventors: Terence J. De Lyon, Rajesh D. Rajavel
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Patent number: 10269996Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.Type: GrantFiled: July 28, 2016Date of Patent: April 23, 2019Assignee: HRL Laboratories, LLCInventors: Hasan Sharifi, Rajesh D. Rajavel, Terence J. De Lyon, Daniel Yap
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Patent number: 9923114Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.Type: GrantFiled: December 1, 2015Date of Patent: March 20, 2018Assignee: THE BOEING COMPANYInventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9876134Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.Type: GrantFiled: December 1, 2015Date of Patent: January 23, 2018Assignee: THE BOEING COMPANYInventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9748427Abstract: The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.Type: GrantFiled: October 31, 2013Date of Patent: August 29, 2017Assignee: HRL Laboratories, LLCInventors: Rajesh D Rajavel, Hasan Sharifi, Terence J De Lyon, Pierre-Yves Delaunay, Brett Z Nosho
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Publication number: 20170155010Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.Type: ApplicationFiled: December 1, 2015Publication date: June 1, 2017Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Publication number: 20170155011Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.Type: ApplicationFiled: December 1, 2015Publication date: June 1, 2017Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
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Patent number: 9466746Abstract: Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.Type: GrantFiled: February 12, 2016Date of Patent: October 11, 2016Assignee: HRL Laboratories, LLCInventors: Terence J De Lyon, Rajesh D Rajavel, Hasan Sharifi
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Patent number: 9444001Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.Type: GrantFiled: June 28, 2013Date of Patent: September 13, 2016Assignee: HRL Laboratories, LLCInventors: Hasan Sharifi, Rajesh D. Rajavel, Terence J. De Lyon, Daniel Yap
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Patent number: 9293612Abstract: Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.Type: GrantFiled: August 7, 2014Date of Patent: March 22, 2016Assignee: HRL Laboratories, LLCInventors: Terence J De Lyon, Rajesh D Rajavel, Hasan Sharifi
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Patent number: 9231137Abstract: Using a highly doped Cap layer of the same composition as the Contact material in an nBn or pBp infrared photodetector allows engineering of the energy band diagram to facilitate minority carrier current flow in the contact region and block minority current flow outside the Contact region. The heavily doped Cap layer is disposed on the Barrier between the Contacts but electrically isolated from the Contact material.Type: GrantFiled: June 3, 2011Date of Patent: January 5, 2016Assignee: HRL Laboratories, LLCInventors: Hasan Sharifi, Terence J. De Lyon, Rajesh D. Rajavel
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Patent number: 8835979Abstract: Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.Type: GrantFiled: June 3, 2011Date of Patent: September 16, 2014Assignee: HRL Laboratories, LLCInventors: Terence J De Lyon, Rajesh D Rajavel, Hasan Sharifi
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Patent number: 8053734Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.Type: GrantFiled: April 30, 2009Date of Patent: November 8, 2011Assignee: Raytehon CompanyInventors: Deborah J. Kirby, David T. Chang, Terence J. De Lyon, James H. Schaffner, Metin S. Mangir, Jeffery J. Puschell, Jar Jueh Lee, Michael Gritz
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Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same
Patent number: 7923689Abstract: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 ?m band. Detection of more than two wavelengths may be achieved by proper scaling.Type: GrantFiled: April 30, 2009Date of Patent: April 12, 2011Assignee: Raytheon CompanyInventors: Deborah J. Kirby, Terence J. De Lyon, David T. Chang, Frederic P. Stratton, Daniel J. Gregoire, Jeffery J. Puschell -
Publication number: 20100276598Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.Type: ApplicationFiled: April 30, 2009Publication date: November 4, 2010Applicant: RAYTHEON COMPANYInventors: Deborah J. Kirby, David T. Chang, Terence J. De Lyon, James H. Schaffner, Metin S. Mangir, Jeffery J. Puschell, Jar Jueh Lee, Michael Gritz
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MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME
Publication number: 20100276595Abstract: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 ?m band. Detection of more than two wavelengths may be achieved by proper scaling.Type: ApplicationFiled: April 30, 2009Publication date: November 4, 2010Applicant: RAYTHEON COMPANYInventors: Deborah J. Kirby, Terence J. De Lyon, David T. Chang, Frederic P. Stratton, Daniel J. Gregoire, Jeffery J. Puschell -
Patent number: 6045614Abstract: A method is provided for depositing a (111)-oriented heteroepitaxial II-VI alloy film on Si substrates. The (111)-oriented heteroepitaxial II-VI alloy film may comprise II-VI semiconductor and/or II-VI semimetal. As such, the method of the present invention provides a means for growing a (111)-oriented heteroepitaxial II-VI semiconductor film or a (111)-oriented heteroepitaxial II-VI semimetal film. The method of the present invention overcomes the inherent difficulties associated with forming (111)-oriented heteroepitaxial II-VI alloy films on Si(001). These difficulties include twin formation and poor crystalline quality. The novelty of the method of the present invention consists principally in choosing a Si substrate having a surface which has a specific Si crystallographic orientation. In particular, the present invention utilizes a Si surface having a crystallographic orientation near Si(111) rather than Si(001). The Si surface is vicinal Si(111).Type: GrantFiled: March 14, 1996Date of Patent: April 4, 2000Assignee: Raytheon CompanyInventors: Terence J. de Lyon, Scott M. Johnson
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Patent number: 5742089Abstract: An epitaxial structure and method of manufacture for a infrared detector device with low dislocation density, especially for high performance large area focal plane arrays. Preferably, the epitaxial structure includes a buffer layer comprising a Hg-based II-VI material and an overlayer comprising a detector comprising a Hg-based II-VI material. The buffer layer is transparent at the operating frequencies of the detector.Type: GrantFiled: June 7, 1995Date of Patent: April 21, 1998Assignee: Hughes ElectronicsInventors: Damodaran Rajavel, Terence J. de Lyon
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Patent number: 5683180Abstract: A method and apparatus for enabling the use of optical techniques for temperature measurement of a semiconducting substrate coated with an optically opaque overlayer. A reflective mirror structure is inserted between the semiconducting substrate and the optically opaque overlayer. The reflective structure prevents the overlayer from absorbing light transmitted through the semiconducting substrate and instead reflects the light, thereby restoring the substrate front-surface reflectivity required for temperature measurement analysis by optical techniques such as absorption edge reflectance spectroscopy.Type: GrantFiled: September 13, 1994Date of Patent: November 4, 1997Assignee: Hughes Aircraft CompanyInventors: Terence J. De Lyon, John A. Roth