Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: An apparatus for electrical inspection is disclosed. The apparatus comprises an inert gas delivery system that delivers inert gas near a microscope imaging element and electrical test probes. A gas supply provides an inert gas such as argon or nitrogen. The inert gas displaces oxygen to prevent premature oxidation of the test probes. In one embodiment, one or more delivery tubes deliver inert gas to the measurement area.

Abstract: Methods of etching a semiconductor structure using ion milling with a variable-position endpoint detector to unlayer multiple interconnect layers, including low-k dielectric films. The ion milling process is controlled for each material type to maintain a planar surface with minimal damage to the exposed materials. In so doing, an ion beam mills a first layer and detects an endpoint thereof using an optical detector positioned within the ion beam adjacent the first layer to expose a second layer of low-k dielectric film. Once the low-k dielectric film is exposed, a portion of the low-k dielectric film may be removed to provide spaces therein, which are backfilled with a material and polished to remove the backfill material and a layer of the multiple interconnect metal layers. Still further, the exposed low-k dielectric film may then be removed, and the exposed metal vias polished.

Abstract: Low-k dielectric materials have desirable insulating characteristics for use in insulating sub micron conductors in semiconductor devices. However, certain physical and material characteristics of the low-k dielectric materials make them difficult to work with. More particularly, the soft, porous, leakage-prone characteristics of low-k materials makes it difficult to accommodate electrical contacts for electrical probing to conductors covered by such materials. The present invention provides methods and structures for facilitating the electrical probing of semiconductor device conductors insulated by overlying low-k layers of dielectric material.

Abstract: Low-k dielectric films such as SiLK are desirably used in semiconductor structures, for example in back-end multilevel metal interconnect structures, as insulators. Low-k dielectric films, however, are prone to damage in the course of typical rework processes such as chemical-mechanical polishing, plasma/reactive ion etching, or wet chemistry processing/etching. The present invention uses an ion milling process with a variable-position endpoint detector to unlayer multiple layers including low-k dielectric films. The ion milling process can be controlled for each material type so as to maintain a planar surface with minimal or no damage to the exposed materials.

Abstract: Low-k dieclectric materials have desirable insulating characteristics for use in insulating sub micron conductors in semiconductor devices. However, certain physical and material characteristics of the low-k dielectric materials make them difficult to work with. More particularly, the soft, porous, leakage-prone characteristics of low-k materials makes it difficult to accommodate electrical contacts for electrical probing to conductors covered by such materials. The present invention provides methods and structures for facilitating the electrical probing of semiconductor device conductors insulated by overlying low-k layers of dielectric material.

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.