Patents by Inventor Terence M. Thomas
Terence M. Thomas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9633865Abstract: The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.Type: GrantFiled: February 22, 2008Date of Patent: April 25, 2017Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Terence M. Thomas, Hongyu Wang
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Patent number: 8563436Abstract: A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.Type: GrantFiled: April 1, 2013Date of Patent: October 22, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Tirthankar Ghosh, Terence M. Thomas, Hongyu Wang, Scott A. Ibbitson
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Patent number: 8540893Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.Type: GrantFiled: August 4, 2008Date of Patent: September 24, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Tirthankar Ghosh, Terence M. Thomas, Hongyu Wang, Scott A. Ibbitson
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Patent number: 7785487Abstract: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.Type: GrantFiled: August 15, 2006Date of Patent: August 31, 2010Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Terence M. Thomas, Qianqiu Ye
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Publication number: 20100029079Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.Type: ApplicationFiled: August 4, 2008Publication date: February 4, 2010Inventors: Tirthankar Ghosh, Terence M. Thomas, Hongyu Wang
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Publication number: 20090215265Abstract: The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.Type: ApplicationFiled: February 22, 2008Publication date: August 27, 2009Inventors: Terence M. Thomas, Hongyu Wang
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Publication number: 20090215266Abstract: An aspect of the invention provides a method for polishing a patterned semiconductor wafer containing a copper interconnect metal with a polishing pad. The method includes the following: a) providing an aqueous polishing solution, the polishing solution containing an benzotriazole (BTA) inhibitor and a copper complexing compound and water; b) polishing the patterned wafer with the aqueous polishing solution and the polishing pad in a manner that dissolves copper into Cu+1 ions, the Cu+1 ions and BTA inhibitor having a concentration where [BTA]*[Cu+1]> than Ksp for Cu-BTA precipitate if the aqueous solution did not contain the complexing compound; and c) oxidizing at least some of the copper ions to prevent the polishing from precipitating the Cu-BTA precipitate.Type: ApplicationFiled: February 22, 2008Publication date: August 27, 2009Inventors: Terence M. Thomas, Hongyu Wang
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Publication number: 20080276543Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having a tantalum-containing barrier layer and copper interconnects. The slurry includes by weight percent, 0 to 5 oxidizing agent, 0.1 to 25 silica particles, 0.001 to 3 polyvinyl pyrrolidone, 0.02 to 5 weight percent imine barrier removal agent selected from at least one of formamidine, formamidine salts, formamidine derivatives, guanidine, guanidine derivatives, guanidine salts and a mixture thereof, 0.02 to 5 weight percent carbonate, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 10 complexing agent and balance water; and the aqueous slurry having a pH of 9 to 11.Type: ApplicationFiled: May 8, 2007Publication date: November 13, 2008Inventors: Terence M. Thomas, Qianqiu Ye
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Patent number: 7387964Abstract: A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.Type: GrantFiled: June 5, 2003Date of Patent: June 17, 2008Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Joseph K. So, Terence M. Thomas
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Publication number: 20080029126Abstract: The present invention provides an aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising by weight percent oxidizer, 0.001 to 5 inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 modified cellulose, 0.001 to 10 phosphorus-containing compound and 0.001 to 10 boehmite abrasive, wherein the boehmite increases the planarization rate of the copper.Type: ApplicationFiled: August 7, 2006Publication date: February 7, 2008Inventor: Terence M. Thomas
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Patent number: 7270762Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.Type: GrantFiled: March 20, 2003Date of Patent: September 18, 2007Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Hongyu Wang, Terence M. Thomas, Qianqiu Ye, Heinz F. Reinhardt, Vikas Sachan
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Patent number: 7253111Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.Type: GrantFiled: April 21, 2004Date of Patent: August 7, 2007Assignee: Rohm and Haas Electronic Materials CMP Holding, Inc.Inventors: Zhendong Liu, John Quanci, Robert E. Schmidt, Terence M. Thomas
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Patent number: 7132058Abstract: A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP solution has a static etch rate for removing the tungsten metal. A secondary oxidizer lowers the static etch rate of the tungsten CMP solution. The secondary oxidizer is selected from the group consisting of bromates and chlorates. Optionally the tungsten CMP contains 0 to 50 weight percent abrasive particles; and it contains a balance of water and incidental impurities.Type: GrantFiled: January 24, 2003Date of Patent: November 7, 2006Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Terence M. Thomas, Stephan De Nardi, Wade Godfrey
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Patent number: 7084059Abstract: A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.Type: GrantFiled: January 21, 2003Date of Patent: August 1, 2006Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Terence M. Thomas, Joseph K. So
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Patent number: 7070485Abstract: A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.Type: GrantFiled: February 2, 2001Date of Patent: July 4, 2006Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Craig D. Lack, Terence M. Thomas, Qianqiu Ye
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Patent number: 6971945Abstract: The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.Type: GrantFiled: February 23, 2004Date of Patent: December 6, 2005Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Zhendong Liu, John Quanci, Robert E. Schmidt, Terence M. Thomas
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Patent number: 6936541Abstract: A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (?/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.Type: GrantFiled: March 28, 2003Date of Patent: August 30, 2005Assignee: Rohn and Haas Electronic Materials CMP Holdings, Inc.Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
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Patent number: 6699299Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: GrantFiled: March 20, 2003Date of Patent: March 2, 2004Assignee: Rodel Holdings, Inc.Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Publication number: 20040023492Abstract: A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (Å/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.Type: ApplicationFiled: March 28, 2003Publication date: February 5, 2004Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
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Patent number: 6664188Abstract: A semiconductor wafer adapted for planarization by polishing the wafer with a polishing pad and a polishing fluid, the wafer having a metal layer, and a resistant film formed selectively on low topography features of the metal layer to resist the polishing fluid while high topography features of the metal layer are removed by said polishing, which minimizes a time duration for attaining planarization of the wafer by said polishing.Type: GrantFiled: July 26, 2001Date of Patent: December 16, 2003Inventor: Terence M. Thomas