Abstract: A microelectronic structure including a nanosheet transistor that includes a source/drain. A frontside contact that includes a first section located on the frontside of the source/drain and a via section that extends to the backside of the nanosheet transistor. A shallow isolation layer located around a portion of the via section the first frontside contact. A backside metal line located on a backside surface of the via section and located on a backside surface of the shallow trench isolation layer. A dielectric liner located along a sidewall of the backside metal line and located along a bottom surface of the backside metal line.

Abstract: A method and system is provided for laser piercing of thick plate material that allows for rapid transition to a cutting operation that can reliably produce a piercing hole and complete a cutting operation of the intended shape in a short time, while improving the cutting quality of the cutting after switching from the piercing operation. The cutting nozzle has a centrally located laser. The piercing operation applies a laser beam to the cut work while axially supplied pure oxygen gas is applied towards the cutting work. Additionally, a direction controlled nozzle adjacent the main cutting port provides a discharge of high pressure compressed air non-axially relative to the cutting operation to clear excess molten metal and debris from the kerf thereby increasing the efficiency of the piercing and shortening the cycle time.