Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

Abstract: Embodiments provide a wafer assembly including a plurality of semiconductor chips, wherein each semiconductor chip has a first main face and a second main face opposite the first main face, and wherein a first electrical contact is disposed on the second main face, a plurality of electrically conducting posts, wherein each first electrical contact is in direct contact with an electrically conducting post, and an electrically insulating sacrificial layer having passages in which the electrically conducting posts are disposed.

Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.