Abstract: The method receives a visual specification, which specifies a data source, visual variables, and data fields from the data source. Each visual variable is associated with data fields and each data field is either a dimension or a measure. From an object model of the data source, the method identifies a minimal subtree that includes all of the dimension data fields and constructs a query from the minimal subtree. The method executes the query against the data source to retrieve a set of tuples, each tuple comprising a unique ordered combination of data values for the dimension data fields. For each tuple, the method forms an extended tuple by appending aggregated data values corresponding to each measure data field. The method then builds and displays a data visualization according to the data fields in the extended tuples and according to the visual variables to which the data fields are associated.

Abstract: A two-terminal device (TTD) capable of preventing leakage current by using diffusion current having bidirectionality and generated due to a potential barrier by an insulator, and a lighting device using the TTD are disclosed.

Abstract: A two-terminal device (TTD) capable of preventing leakage current by using diffusion current having bidirectionality and generated due to a potential barrier by an insulator, and a lighting device using the TTD are disclosed.

Abstract: Disclosed are an ambipolar transistor and a high-sensitivity electronic sensor using the same. The ambipolar transistor includes: a substrate; a gate formed on the substrate; a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate; and a source portion and a drain portion formed on the gate insulating film and spaced apart from each other, wherein the source portion and the drain portion comprise: a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively; and a plurality of source sub-terminals and a plurality of drain sub-terminals alternately arranged between the main source terminal and the main drain terminal, respectively.

Abstract: Disclosed are a light device using an ambipolar transistor, which comprises an LED connected to a drain electrode; a power source connected to the LED; a source electrode connected to the power source; and a gate electrode connected to both the LED and the drain electrode, wherein diffusion current between the source electrode and the drain electrode allows reception of electronic signal.

Abstract: Disclosed are an ambipolar transistor and a high-sensitivity electronic sensor using the same. The ambipolar transistor includes: a substrate; a gate formed on the substrate; a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate; and a source portion and a drain portion formed on the gate insulating film and spaced apart from each other, wherein the source portion and the drain portion comprise: a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively; and a plurality of source sub-terminals and a plurality of drain sub-terminals alternately arranged between the main source terminal and the main drain terminal, respectively.

Abstract: Disclosed are an ambipolar transistor and a leakage current cutoff device using the same. The ambipolar transistor includes: a substrate; a gate formed on the substrate; a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate; and a source portion and a drain portion formed on the gate insulating film and spaced apart from each other, wherein the source portion and the drain portion comprise: a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively; and a plurality of source sub-terminals and a plurality of drain sub-terminals alternately arranged between the main source terminal and the main drain terminal, respectively.