Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

Abstract: A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. The single quantum well structure includes a quantum well layer, which is arranged between a first barrier layer and a second barrier layer, wherein the first barrier layer faces the n-type semiconductor region, and the second barrier layer faces the p-type semiconductor region. An electronic bandgap EQW of the quantum well layer is smaller than an electronic bandgap EB1 of the first barrier layer and smaller than an electronic bandgap EB2 of the second barrier layer, and the electronic bandgap EB1 of the first barrier layer is larger than the electronic bandgap EB2 of the second barrier layer.

Abstract: A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. The single quantum well structure includes a quantum well layer, which is arranged between a first barrier layer and a second barrier layer, wherein the first barrier layer faces the n-type semiconductor region, and the second barrier layer faces the p-type semiconductor region. An electronic bandgap EQW of the quantum well layer is smaller than an electronic bandgap EB1 of the first barrier layer and smaller than an electronic bandgap EB2 of the second barrier layer, and the electronic bandgap EB1 of the first barrier layer is larger than the electronic bandgap EB2 of the second barrier layer.

Abstract: An optoelectronic component and a method for the producing an optoelectronic component are disclosed.

Abstract: An optoelectronic component and a method for the producing an optoelectronic component are disclosed.

Abstract: An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlxInyGa1?x?yN where 0<=x<=1, 0<=y<=1 and x+y<=1. The layer sequence includes a first p-doped layer having an aluminum proportion x1>=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x2<x1 and a third p-doped layer having an aluminum proportion x3<x2.

Abstract: An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlxInGa1-x-yN where 0<=x<=1, 0<=y<=1 and x+y<=1. The layer sequence includes a first p-doped layer having an aluminum proportion x1>=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x2<x1 and a third p-doped layer having an aluminum proportion x3<x2.

Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.