Abstract: A method and system for controlling a dimension of an etched feature. The method includes: measuring a mask feature formed on a top surface of a layer on a substrate to obtain a mask feature dimension value; and calculating a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value, a total of selected radio frequency power-on times of a plasma etch tool since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch of the layer.

Abstract: Integration of factory level advanced process control (FL-APC) system and tool level advanced process control (TL-APC) system using selectable APC operation modes indicating different operational settings for the FL-APC system and at least one TL-APC system is disclosed. During operation, the FL-APC system controls operation of the TL-APC system. The invention allows a manufacturing execution system (MES) to have additional capability to run the process control functions at FL-APC system and/or TL-APC system, and allows integration of a variety of different tools with a TL-APC system. An implementation method, system and program product are also disclosed.

Abstract: A method and system for controlling a dimension of an etched feature. The method includes: measuring a mask feature formed on a top surface of a layer on a substrate to obtain a mask feature dimension value; and calculating a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value, a total of selected radio frequency power-on times of a plasma etch tool since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch of the layer.