Abstract: Exemplar embodiments are disclosed which allow errors in a magnetoresistive solid-state storage device, such as a magnetic random access memory (MRAM) device, to be minimized. An illustrative method includes the steps of identifying cells in the device which have a failure mode characterized by a propensity to remain in a particular orientation of magnetization, mapping the location of the identified cells, and compensating for the failure mode of a cell at a mapped location. Systems and computer readable media are also provided.

Abstract: Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.

Abstract: Exemplar embodiments are disclosed which allow errors in a magnetoresistive solid-state storage device, such as a magnetic random access memory (MRAM) device, to be minimized. An illustrative method includes the steps of identifying cells in the device which have a failure mode characterized by a propensity to remain in a particular orientation of magnetization, mapping the location of the identified cells, and compensating for the failure mode of a cell at a mapped location. Systems and computer readable media are also provided.

Abstract: A memory housing is provided comprising at least one memory device positioned within the housing, the at least one memory device having a performance parameter responsive to an environmental condition, and an environmental maintaining device for non-ambiently changing an environmental condition within the memory housing to cause the performance parameter of the at least one memory device to meet a criteria.