Patents by Inventor Terrence C. Leslie

Terrence C. Leslie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective epitaxy vertical integrated circuit components and methods
    Patent number: 7851309
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: December 14, 2010
    Assignee: Micron Technology, Inc.
    Inventor: Terrence C. Leslie
  • SELECTIVE EPITAXY VERTICAL INTEGRATED CIRCUIT COMPONENTS AND METHODS
    Publication number: 20090197379
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body.
    Type: Application
    Filed: April 6, 2009
    Publication date: August 6, 2009
    Inventor: Terrence C. Leslie
  • Selective epitaxy in vertical integrated circuit
    Patent number: 7514324
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body. These components are grown directly in electrical communication lines. Moreover, these components are adapted for use in memory devices and are believed to not require the use of shallow trench isolation.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: April 7, 2009
    Assignee: Micron Technology, Inc.
    Inventor: Terrence C. Leslie
  • Selective epitaxy vertical integrated circuit components
    Patent number: 7372091
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body. These components are grown directly in electrical communication lines. Moreover, these components are adapted for use in memory devices and are believed to not require the use of shallow trench isolation.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: May 13, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Terrence C. Leslie