Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

Abstract: A valve lifter assembly for an engine may include a valve lifter body, a roller pin mounted in the valve lifter body and having a crowned barrel portion, and a substantially cylindrical roller mounted about the crowned barrel portion of the roller pin. The roller may have a crowned outer surface with a cylindrical center portion having a constant outer diameter equal to a roller maximum outer diameter, and oppositely disposed variable outer diameter outer portions extending outwardly from either side of the cylindrical center portion toward corresponding roller ends of the roller with a roller outer diameter decreasing as the variable outer diameter outer portions extend outwardly from the cylindrical center portion. The valve lifter assembly may further include a clip having engagement surfaces that are machined to have complimentary shapes to corresponding engagement surfaces of the valve lifter body.

Abstract: A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.

Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

Abstract: The invention relates to epitopes of SEMA4D and to binding agents, such as antibodies, that specifically bind to SEMA4D.

Abstract: An article of headwear including a crown component, a brim component, and an elongated attachment component is provided. The attachment component is configured to attach the brim component to the crown component. The attachment component may include a female-type engagement element along a first elongated edge of the attachment component and a flange element along a second elongated edge of the attachment component. The second elongated edge is opposite to the first elongated edge. The female-type engagement element has first and second arms defining therebetween an elongated channel having a length and a depth. The flange element extends in a direction transverse to the length of the channel. The crown component is attached to the flange element. The brim component includes a connection region configured for insertion into the channel. An article of headwear having an attachment component for attaching decorative elements to the headwear is also provided.

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract: A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.

Abstract: Embodiments are directed towards a helmet adapted for use by a human being for a variety of activities. The helmet includes a shell, a plurality of FAEs, and at least one rigid component. The shell maybe configured and arranged to cover a portion of a wearer's head. The plurality of FAEs may be separately positioned adjacent to the shell's interior surface. Each FAE may include at least one disc spring that is adapted for absorbing forces. The at least one rigid component may be disposed within the shell and adjacent to the plurality of FAEs. In this way, the FAEs may be between the shell's interior surface and the at least one rigid component. When a force is applied to a location on the shell's exterior surface, it may be substantially absorbed by at least one of the FAEs positioned adjacent to the location on the shell's interior surface.

Abstract: A fiber-reinforced resin composite and method of making the same. The fiber-reinforced resin composite includes a polymeric resin matrix and a plurality of fibers coated with a first distortional polymeric resin. The polymeric resin matrix has a first von Mises strain. The first distortional polymeric resin has a second von Mises strain in a range of approximately 0.25 to approximately 0.45. The plurality of fibers coated with the first distortional polymeric resin are disposed in the polymeric resin matrix. The second von Mises strain is greater than the first von Mises strain.

Abstract: A fiber-reinforced resin composite and method of making the same. The fiber-reinforced resin composite includes a polymeric resin matrix and a plurality of fibers coated with a first distortional polymeric resin. The polymeric resin matrix has a first von Mises strain. The first distortional polymeric resin has a second von Mises strain in a range of approximately 0.25 to approximately 0.45. The plurality of fibers coated with the first distortional polymeric resin are disposed in the polymeric resin matrix. The second von Mises strain is greater than the first von Mises strain.

Abstract: An improved ferrule for Cue/Billiard sticks. The Tungsten Carbide Ferrule is a cylindrical metal body with an interior bore through the entire length. The Tungsten Carbide Ferrule is attached to the shaft of the Cue/Billiard stick by means of a tenon formed on the shaft. This will allow the ferrule to tightly engage the shaft of the cue and is secured by typical means of attachment, normally glue or epoxy. The tenon is extended to the end of the ferrule. A tip of leather or other material can then be attached using normal gluing methods.

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Abstract: Improved support posts are disclosed for shelving systems comprising one or more shelves spaced and supported by the support posts. Improved shelving systems comprising such support posts also are disclosed. The disclosed support posts have strengthening ribs extending longitudinally along their inside surface. The improved support posts and shelving systems incorporating the improved support posts have greater strength and rigidity with little added cost or weight of material.

Abstract: Improved shelves are disclosed for shelving systems comprising one or more such improved shelves and support posts. Elongate elements along the underside of the shelves have post-receiving recesses to receive support posts along the underside of the shelf during storage and shipment. The improved shelves and shelving systems allow greater efficiency in packaging, shipping and storage.