Patents by Inventor Terrence Leslie

Terrence Leslie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230072539
    Abstract: Introduced here is an artificial intelligence system designed for machine learning. The system may be based on a neuromorphic computational model that learns spatial patterns in inputs using data structures called Sparse Distributed Representations (SDRs) to represent the inputs. Moreover, the system can generate signatures for these SDRs, and these signatures may be used to create definitions of classes or subclasses for classification purposes.
    Type: Application
    Filed: July 29, 2022
    Publication date: March 9, 2023
    Inventors: Harold B Noyes, David Roberts, Russell B. Lloyd, William Tiffany, Jeffery Tanner, Terrence Leslie, Daniel Skinner, Indranil Roy
  • Publication number: 20220164637
    Abstract: Introduced here are integrated circuits (also referred to as “chips”) that can be implemented in a neural processing unit. At a high level, the goal of these chips is to provide higher performance for machine learning algorithms than conventional processing units would. To accomplish this, the neural processing unit can include multiple computing components, each of which is able to independently determine the overlap between encoded data provided as input and values stored in a memory.
    Type: Application
    Filed: November 19, 2021
    Publication date: May 26, 2022
    Inventors: Harold B. Noyes, David Roberts, Russell Lloyd, William Tiffany, Jeffery Tanner, Terrence Leslie, Daniel Skinner, Indranil Roy
  • Publication number: 20060006444
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body. These components are grown directly in electrical communication lines. Moreover, these components are adapted for use in memory devices and are believed to not require the use of shallow trench isolation.
    Type: Application
    Filed: August 31, 2005
    Publication date: January 12, 2006
    Inventor: Terrence Leslie
  • Publication number: 20050164454
    Abstract: Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body. These components are grown directly in electrical communication lines. Moreover, these components are adapted for use in memory devices and are believed to not require the use of shallow trench isolation.
    Type: Application
    Filed: January 27, 2004
    Publication date: July 28, 2005
    Inventor: Terrence Leslie