Abstract: A method for depositing silicon nitride on a semiconductor wafer uses plasma enhanced chemical vapor deposition at very low temperatures. The temperature in a silicon nitride deposition chamber is set to be about 170.degree. C. or less. Silane gas (SiH.sub.4) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 300 sccm (standard cubic cm per minute) to about 500 sccm. Nitrogen gas (N.sub.2) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 500 sccm to about 2000 sccm. Ammonia gas (NH.sub.3) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 1.0 slm to about 2.2 slm. A high frequency RF signal is applied on a showerhead within the deposition chamber. A low frequency RF signal is applied on a heating block for holding the semiconductor wafer.

Abstract: A system and method for using a nitrous oxide plasma treatment to eliminate defects at an interface between a stop layer and an integral layered dielectric. The system and method provide a reliable and simplified technology that eliminates the small bubble-like defects that can be common to thin nitride layers. The system includes a plasma device and a processing chamber. The method encompasses the steps of preparing a first integral layered dielectric on a substrate before depositing a stop layer thereupon. A plasma gas is then ionized. Preferably, the plasma gas is composed of nitrogen and oxygen. The stop layer is then exposed to the plasma gas until a primary surface of the stop layer is bombarded plane. A second integral layered dielectric is then formed on the primary surface. A top surface of the second integral layered dielectric is generally plane and parallel to the primary surface.

Abstract: A method for depositing silicon dioxide on a semiconductor wafer uses plasma enhanced chemical vapor deposition at very low temperatures. The temperature in a silicon dioxide deposition chamber is set to be about 170.degree. C. or less. Silane gas (SiH.sub.4) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 50 sccm (standard cubic cm per minute) to about 110 sccm. Nitrogen gas (N.sub.2) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 500 sccm to about 3000 sccm. Nitrous oxide gas (N.sub.2 O) flows into the silicon dioxide deposition chamber with a flow rate in a range of from about 5000 sccm to about 9000 sccm. A high frequency RF signal is applied on a showerhead within the deposition chamber. A low frequency RF signal is applied on a heating block for holding the semiconductor wafer.