Patents by Inventor Terri Kitson

Terri Kitson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ deposition of stop layer and dielectric layer during formation of local interconnects
    Patent number: 6060404
    Abstract: An in-situ deposition method allows for the forming of a dielectric layer suitable for use in forming a conductive path in a semiconductor wafer. The method includes depositing a thin SiO.sub.x N.sub.y stop layer on top of a semiconductor wafer within a chemical vapor deposition (CVD) reactor chamber having a low pressure, maintaining the low pressure following the deposition of the SiO.sub.x N.sub.y stop layer, and then depositing a thick TEOS oxide dielectric layer on the SiO.sub.x N.sub.y stop layer within the CVD reactor chamber. The in-situ deposition process reduces outgassing defects that would normally form at the interface between the SiON stop layer and the TEOS oxide dielectric layer.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: May 9, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Minh Van Ngo, Darin A. Chan, Sey-Ping Sun, Terri Kitson, John Caffall